公开(公告)号：US07960225B1

公开(公告)日：2011-06-14

申请号：US12869894

申请日：2010-08-27

申请人： Etsurou Morita ,  Akihiko Endo ,  Yoshihisa Nonogaki ,  Hideki Nishihata

发明人： Etsurou Morita ,  Akihiko Endo ,  Yoshihisa Nonogaki ,  Hideki Nishihata

IPC分类号： H01L21/8238

CPC分类号： H01L27/1469 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is reached by controlling the plasma etching amount. By doing this, it is possible to reduce variation in the thickness of the solid-state image sensing device at low cost without causing an increase in the number of processes.

摘要翻译： 测量从其镜面加工表面延伸到固态图像感测装置的半导体晶片层的厚度。 基于剩余厚度数据，通过控制等离子体蚀刻量，从镜面加工表面进行等离子体蚀刻直到达到预定厚度。 通过这样做，可以以低成本降低固体摄像装置的厚度变化，而不会增加处理次数。

公开(公告)号：US20070069335A1

公开(公告)日：2007-03-29

申请号：US10570665

申请日：2004-09-08

申请人： Akihiko Endo ,  Hideki Nishihata

发明人： Akihiko Endo ,  Hideki Nishihata

IPC分类号： H01L29/06 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： The bonding surfaces of an active layer wafer and a supporting wafer have fitting surfaces each comprising a part of a spherical surface of the same curvature, and they are to be bonded together with their bonding surfaces superposed with each other. As a result, an area left as not-bonded in the outer peripheral portion of the bonded wafer is reduced and thus a fixed quality area can be expanded. Therefore, the yield of the bonded SOI wafer becomes high, and the chipping, wafer peel-off and the like phenomenon in the subsequent steps of wafer processing can be reduced.

摘要翻译： 有源层晶片和支撑晶片的接合表面具有各自包括相同曲率的球形表面的一部分的配合表面，并且它们将彼此重叠的结合表面结合在一起。 结果，在接合晶片的外周部分中没有粘合的区域减少，从而可以扩大固定质量区域。 因此，接合的SOI晶片的产率变高，可以减少晶片处理的后续步骤中的切屑，晶片剥离等现象。

公开(公告)号：US20080200010A1

公开(公告)日：2008-08-21

申请号：US10569942

申请日：2004-09-01

申请人： Akihiko Endo ,  Hideki Nishihata

发明人： Akihiko Endo ,  Hideki Nishihata

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon oxide film is large at a time of ion implantation. Furthermore, since the silicon oxide film is rather thinner and thereby the ion implantation depth is relatively deeper, damages to the active layer and the buried silicon oxide film caused by the ion implantation can be reduced.

摘要翻译： 用于有源层的晶片的氧化硅膜的厚度被控制为比掩埋的氧化硅膜薄。 因此，即使离子注入时氧化硅膜的面内厚度的变化大，接合晶片的有源层的膜厚均匀性也提高。 此外，由于氧化硅膜相当薄，因此离子注入深度相对较深，可以减少由离子注入引起的对有源层和掩埋氧化硅膜的损伤。

公开(公告)号：US07625808B2

公开(公告)日：2009-12-01

申请号：US10569942

申请日：2004-09-01

申请人： Akihiko Endo ,  Hideki Nishihata

发明人： Akihiko Endo ,  Hideki Nishihata

IPC分类号： H01L21/30 ,  H01L21/44

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon oxide film is large at a time of ion implantation. Furthermore, since the silicon oxide film is rather thinner and thereby the ion implantation depth is relatively deeper, damages to the active layer and the buried silicon oxide film caused by the ion implantation can be reduced.

摘要翻译： 用于有源层的晶片的氧化硅膜的厚度被控制为比掩埋氧化硅膜薄。 因此，即使离子注入时氧化硅膜的面内厚度的变化大，接合晶片的有源层的膜厚均匀性也提高。 此外，由于氧化硅膜相当薄，因此离子注入深度相对较深，可以减少由离子注入引起的对有源层和掩埋氧化硅膜的损伤。

公开(公告)号：US07902043B2

公开(公告)日：2011-03-08

申请号：US11855959

申请日：2007-09-14

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM) or less.

摘要翻译： 一种制造接合晶片的方法，其特征在于，包括：在不在其间插入绝缘膜的情况下进行第一半导体晶片和第二半导体晶片的接合; 以及执行所述第二半导体晶片的薄化，其中至少包括所述第一半导体晶片和所述第二半导体晶片的键合表面的表面部分的氧浓度为1.0×1018原子/ cm3（旧ASTM）或更低。

公开(公告)号：US07855132B2

公开(公告)日：2010-12-21

申请号：US12057896

申请日：2008-03-28

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  H01L21/76251

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括通过在有源层晶片中注入氧离子，在基片电阻率为1〜100mΩ/ cm 2的有源层晶片中形成氧离子注入层，将基底晶片和有源层晶片直接或通过绝缘层 形成接合晶片，对接合的晶片进行加热处理，以加强结合，并将氧离子注入层转换成活性层晶片表面侧的停止层，研磨，抛光和/或蚀刻， 已经加强了接合以使接合晶片的表面上的停止层露出，去除停止层，并且在还原气氛下对已经去除了停止层的接合晶片进行热处理以扩散包含的导电组分 在有源层晶片中。

公开(公告)号：US20100015779A1

公开(公告)日：2010-01-21

申请号：US12064605

申请日：2007-07-04

申请人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

发明人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30625

摘要： There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

摘要翻译： 提供了在变薄后具有优异的厚度均匀性但具有良好的表面粗糙度并且缺陷较少的接合晶片。 在通过将有源层用晶片与用于支撑基板的晶片接合并使用于有源层的晶片变薄的接合晶片的制造方法中，将氧离子注入到有源层用晶片中，在活性层中形成氧离子注入层 然后在非氧化性气氛中在不低于1100℃的温度下进行热处理，除去形成在氧离子注入层的暴露表面上的氧化膜，然后进行热处理 在不高于1100℃的温度下在非氧化性气氛中。

公开(公告)号：US07446016B2

公开(公告)日：2008-11-04

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。

公开(公告)号：US20080070377A1

公开(公告)日：2008-03-20

申请号：US11855959

申请日：2007-09-14

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM or less.

摘要翻译： 一种制造接合晶片的方法，其特征在于，包括：在不在其间插入绝缘膜的情况下进行第一半导体晶片和第二半导体晶片的接合; 以及执行第二半导体晶片的薄化，其中至少包括第一半导体晶片和第二半导体晶片的键合表面的表面部分的氧浓度为1.0×10 18原子/ cm 3， / SUP>（旧ASTM或更低。

公开(公告)号：US20060281280A1

公开(公告)日：2006-12-14

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。