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21.发明授权Adaptive signal processing device, echo suppressing device and hand-portable telephone device 失效自适应信号处理装置，回波抑制装置和手提电话装置
公开(公告)号：US5661795A
公开(公告)日：1997-08-26
申请号：US515448
申请日：1995-08-15
申请人： Yuji Maeda
发明人： Yuji Maeda
摘要： An adaptive signal processing device employed in a hand-portable telephone configured to adaptively estimate signal transfer characteristics in a transmission system and process signals based upon such estimation includes a power calculating unit, a filter coefficient updating unit, an arithmetic-logical unit and an echo removing unit. The power calculating unit calculates the power of a first input signal x(n) entering the device via a transmission system. The filter coefficient updating unit calculates a filter coefficient h(n+1)(i) updated at time n+1 based upon the first input signal x(n), a signal e(n) corresponding to a second input signal d(n) to be transmitted over the transmission system less a pseudo-echo component, a signal 2.sup.Pe outputted by the power calculating unit, a control constant a and a filter coefficient h(n)(i) at time n, in accordance with an equationh.sub.(n+1) (i)=h.sub.(n) (i)+.alpha.(e(n).times.(n-i))2.sup.PeA convolution unit performs convolution on the first input signal x(n) using filter coefficients from the filter coefficient updating unit, while an echo removing unit removes echo components contained in the second input signal d(n) by an output signal of the convolution unit.
摘要翻译： 一种在便携式电话中采用的自适应信号处理装置，被配置为自适应地估计传输系统中的信号传送特性，并且基于这种估计处理信号包括功率计算单元，滤波器系数更新单元，算术逻辑单元和回波 去除单元。 功率计算单元经由传输系统计算进入设备的第一输入信号x（n）的功率。 滤波器系数更新单元基于第一输入信号x（n）计算在时刻n + 1更新的滤波器系数h（n + 1）（i），对应于第二输入信号d（n）的信号e ）通过传输系统减去伪回波分量，由功率计算单元输出的信号2Pe，时间n处的控制常数a和滤波器系数h（n）（i）根据等式h（ n + 1）（i）= h（n）（i）+ alpha（e（n）x（ni））2PeA卷积单元使用来自滤波器系数更新单元的滤波器系数对第一输入信号x 而回波去除单元通过卷积单元的输出信号去除包含在第二输入信号d（n）中的回波分量。
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公开(公告)号：US5556059A
公开(公告)日：1996-09-17
申请号：US266556
申请日：1994-06-28
申请人： Yuji Maeda , Seiji Ito , Chiaki Chida
发明人： Yuji Maeda , Seiji Ito , Chiaki Chida
CPC分类号： H02G11/00 , B60R16/0215
摘要： A device for guiding a wire harness connected to a steering column, includes a protector for accomodating a slacken part of the wire harness therein and two half cylindrical ribs elastically formed in the protector. In operation, when the slacken part is expanded, the ribs serve to urge the slacken part to recover the original configuration before being expanded.
摘要翻译： 用于引导连接到转向柱的线束的装置包括用于容纳线束的松弛部分的保护器和在保护器中弹性形成的两个半圆柱形肋。 在操作中，当松弛部分膨胀时，肋条用于促使松弛部分在膨胀之前恢复原始构造。
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公开(公告)号：US5521486A
公开(公告)日：1996-05-28
申请号：US360968
申请日：1994-12-21
申请人： Nobuo Takamoto , Yuji Maeda , Sakae Hikita , Katsuji Marumoto
发明人： Nobuo Takamoto , Yuji Maeda , Sakae Hikita , Katsuji Marumoto
CPC分类号： H02P9/00 , H02J7/1461 , Y02T10/7005
摘要： A charging generator having a self-diagnosis function includes a self-diagnosis circuit, a storage device and an output device. When an anomaly is detected, the charging generator with a self-diagnosis function stores data concerning at least one anomalous condition of the generator and the contents of the anomaly in the storage device, and outputs the anomalous data concerning the generator or the contents of the anomaly, which are stored in the storage device, by inputting a specific signal from the outside.
摘要翻译： 具有自诊断功能的充电发生器包括自诊断电路，存储装置和输出装置。 当检测到异常时，具有自诊断功能的充电发生器存储关于发电机的至少一个异常状况和存储装置中的异常内容的数据，并输出与发电机有关的异常数据或 通过从外部输入特定信号，存储在存储装置中的异常。
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公开(公告)号：US5186136A
公开(公告)日：1993-02-16
申请号：US747146
申请日：1991-08-19
申请人： Yuzo Kadomukai , Makoto Yamakado , Yuji Maeda , Kenichi Nakamura , Masao Fukushima , Kei Murakami
发明人： Yuzo Kadomukai , Makoto Yamakado , Yuji Maeda , Kenichi Nakamura , Masao Fukushima , Kei Murakami
摘要： An apparatus and a method for detecting abnormal combustion in an internal combustion engine and an apparatus and a method for controlling vibration caused by abnormal combustion. The apparatus for detecting abnormal combustion includes a unit for detecting the rotation of an internal combustion engine, a unit for calculating rotation angular acceleration on the basis of the detected rotation, a unit for comparing the rotation angular acceleration at the position of a predetermined crank angle in one cycle of the operation of the internal combustion engine with a predetermined reference value, and a unit for judging from the comparison result whether abnormal combustion occurs in the internal combustion engine. The apparatus for reducing vibration caused by abnormal combustion offsets vibration caused by abnormal combustion and vibration of an electric generator to each other by passing a pulse-like field current in the electric generator in response to detection of abnormal combustion to generate vibration torque in the electric generator.
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25.发明授权
公开(公告)号：US5086741A
公开(公告)日：1992-02-11
申请号：US568086
申请日：1990-08-16
申请人： Kenichi Nakamura , Yozo Nakamura , Yuji Maeda , Masami Nagano , Yuzo Kadomukai
发明人： Kenichi Nakamura , Yozo Nakamura , Yuji Maeda , Masami Nagano , Yuzo Kadomukai
CPC分类号： F02D41/045 , F02D41/1498 , G01M15/11 , F02B2075/027 , F02D2200/1012 , F02D2200/1015
摘要： A method of detecting the condition of combustion in each cylinder of an internal combustion engine while monitoring a variation in rotation of a crankshaft in the engine for each cylinder, in which the degree of irregular combustion is judged based on the magnitude of the rotational variation, and/or in which the condition of combustion in a succeeding cylinder is judged based on the difference between rotational variations within one combustion period, of adjacent cylinders, and/or in which the rotational ascending rate within one combustion period, of each cylinder is detected to judge the condition of combustion in the cylinder based on the dropping state of the rotational ascending rate, and/or in which the rotational angular acceleration within one combustion period, of each cylinder is detected to thereby judge that a predetermined cylinder is in a condition of irregular combustion when the quantity of the variation in rotational angular acceleration between adjacent cylinders exceeds a predetermined value.
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公开(公告)号：US5038299A
公开(公告)日：1991-08-06
申请号：US414601
申请日：1989-09-29
申请人： Yuji Maeda
发明人： Yuji Maeda
CPC分类号： G06F13/38 , G06F3/1293
摘要： An electronic apparatus includes a program memory having a parallel transfer program and a serial transfer program, a connector on the electronic apparatus to which a parallel transfer interface or a serial transfer interface is detachably connected, and a judging unit for judging the kind of the printer interface connected to the connector. A program suitable for the kind of the printer interface judged by the judge unit is called from the program memory by means of a program selecting unit. This enables the electronic apparatus to be connected for use with a parallel transfer printer and a serial transfer printer.
摘要翻译： 电子设备包括具有并行传送程序和串行传送程序的程序存储器，电子设备上的可拆卸地连接有并行传送接口或串行传送接口的连接器，以及用于判断打印机的种类的判断单元 接口连接到连接器。 通过程序选择单元从程序存储器调用适合于由判断单元判断的打印机接口类型的程序。 这使得电子设备能够被连接以与并行传送打印机和串行传送打印机一起使用。
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公开(公告)号：US07465669B2
公开(公告)日：2008-12-16
申请号：US11273380
申请日：2005-11-12
IPC分类号： H01L21/311
CPC分类号： H01L21/3081 , C23C16/345 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/31612 , H01L21/3185
摘要： Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
摘要翻译： 本文提供了在半导体衬底上制造氮化硅叠层的方法的实施例。 在一个实施例中，在半导体衬底上制造氮化硅叠层的方法包括：使用选择性地控制所述基底层的应力的第一组工艺条件，将包括氮化硅的基底层沉积在所述衬底上; 以及使用选择性地控制上层的抗氧化性和折射率中的至少一种的第二组工艺条件沉积包括氮化硅的上层。
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公开(公告)号：US07464030B1
公开(公告)日：2008-12-09
申请号：US09048076
申请日：1998-03-26
申请人： Yuji Maeda , Shuichi Maeda
发明人： Yuji Maeda , Shuichi Maeda
IPC分类号： G10L19/00
CPC分类号： G10L19/135
摘要： Each of the M basic vectors in a noise code book 260 is multiplied by a factor ±1 in a sign adder 270 and combined in an adder 280 to create 2M noise signed vectors. The characteristic of the binary Gray code is utilized as follows. A change ΔGu obtained between a noise signed vector based on a signed word i of the binary Gray code and a noise sign vector based on a sign word u adjacent to the sign word i and different from the sign word i only in a predetermined bit position v is used in such a manner that a sign word u′ which is next to reverse the bit position v on the Gray code sequence can express a change ΔGu′ from the noise signed vector by utilizing the fact that the sign word u′ differs from the sign word u only in one bit position w excluding the bit position V. Thus, calculation is simplified, increasing the vector search speed.
摘要翻译： 噪声码本260中的每个M个基本矢量在符号加法器270中乘以因子±1，并在加法器280中合成，以产生2M个噪声带符号矢量。 二进制格雷码的特征如下。 基于二进制格雷码的有符号字i的噪声有符号矢量和仅与符号字i相邻的符号字u的噪声符号向量获得的变化DeltaGu，并且仅在预定位位置 v以这样一种方式使用，即接下来使格雷码序列上的位位置v反转的符号字u'可以通过利用符号字u'与噪声带符号矢量不同的事实来表示来自噪声带符号矢量的变化DeltaGu' 符号字u仅在排除位位置V的一位位置w中。因此，简化了计算，增加了矢量搜索速度。
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公开(公告)号：US20080119059A1
公开(公告)日：2008-05-22
申请号：US11561858
申请日：2006-11-20
IPC分类号： H01L21/31
CPC分类号： H01L21/31612 , C23C16/402 , H01L21/02164 , H01L21/02271
摘要： Methods for low thermal budget silicon dioxide chemical vapor deposition in single-wafer chambers are provided. In semiconductor manufacturing, Si2H6-based oxide deposition is worthy of consideration as a viable alternative to higher temperature thermal CVD processes. A process of forming a film on a substrate is provided, the process comprising: placing a substrate in a thermal low-pressure chemical vapor deposition single-wafer chamber; flowing disilane (Si2H6) into the chamber; flowing nitrous oxide (N2O) into the chamber at a ratio of at least approximately 300:1 N2O:Si2H6; heating the chamber at a temperature of from approximately 450° C. to approximately 550° C.; and forming the film on the substrate, wherein the film comprises silicon dioxide (SiO2).
摘要翻译： 提供了在单晶片室中用于低热预算二氧化硅化学气相沉积的方法。 在半导体制造中，作为较高温度热CVD工艺的可行替代方案，值得考虑的是Si 2 H 6 N 6基氧化物沉积。 提供了在基板上形成膜的工艺，该方法包括：将基板放置在热低压化学气相沉积单晶片室中; 流动的乙硅烷（Si 2 H 6 H 6）进入室中; 将一氧化二氮（N 2 O 2 O）以至少约300:1的比例流入室中N 2 O 2 Si 2 H 2 SUB> 6
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公开(公告)号：US20070111538A1
公开(公告)日：2007-05-17
申请号：US11273380
申请日：2005-11-12
申请人： R. Iyer , Sanjeev Tandon , Kangzhan Zhang , Rubi Lapena , Yuji Maeda
发明人： R. Iyer , Sanjeev Tandon , Kangzhan Zhang , Rubi Lapena , Yuji Maeda
IPC分类号： H01L21/31
CPC分类号： H01L21/3081 , C23C16/345 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/31612 , H01L21/3185
摘要： Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
摘要翻译： 本文提供了在半导体衬底上制造氮化硅叠层的方法的实施例。 在一个实施例中，在半导体衬底上制造氮化硅堆叠的方法包括：使用选择性地控制基底层的应力的第一组工艺条件，在衬底上沉积包括氮化硅的基底层; 以及使用选择性地控制上层的抗氧化性和折射率中的至少一种的第二组工艺条件沉积包括氮化硅的上层。
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