公开(公告)号：US12100588B2

公开(公告)日：2024-09-24

申请号：US18214891

申请日：2023-06-27

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/40 ,  H01L21/3105 ,  H01L21/311 ,  H10B69/00 ,  C23C16/56

CPC classification number: H01L21/0234 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/31111 ,  H10B69/00 ,  C23C16/401 ,  C23C16/56

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

公开(公告)号：US12077852B2

公开(公告)日：2024-09-03

申请号：US17240395

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

IPC: C23C16/04 ,  C23C16/18 ,  C23C16/40 ,  C23C22/77 ,  C23C22/82

CPC classification number: C23C16/042 ,  C23C16/18 ,  C23C16/402 ,  C23C22/77 ,  C23C22/82

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

公开(公告)号：US20240261467A1

公开(公告)日：2024-08-08

申请号：US18561632

申请日：2022-05-16

Applicant: PICOSUN OY

Inventor： Riina RITASALO ,  Tom BLOMBERG

IPC: A61L27/30 ,  C23C16/40 ,  C23C16/455

CPC classification number: A61L27/30 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45529 ,  A61L2300/404 ,  A61L2300/608 ,  A61L2400/12 ,  A61L2420/02 ,  A61L2420/08

Abstract: A corrosion resistant coating for substrates susceptible to corrosion in essentially saline environments, optionally, in vivo environments, is provided. The coating is provided as a nanolaminate structure comprising a plurality of deposition layers formed through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD) such that the deposition layers having a first composition alternate with the deposition layers having a second composition different from the first composition. A nanolaminate stack produced thereby forms a diffusion barrier that efficiently prevents corrosive species, such as corrosive ionic species, originating from essentially saline environments from contacting the substrate. Related method for improving resistance of a substrate to corrosion in essentially saline media and uses of the nanolaminate coating are further provided.

公开(公告)号：US20240254619A1

公开(公告)日：2024-08-01

申请号：US18199058

申请日：2023-05-18

Applicant: ASM IP Holding B.V.

Inventor： Seungju Chun

IPC: C23C16/04 ,  C23C16/40

CPC classification number: C23C16/045 ,  C23C16/402

Abstract: Provided is a substrate processing method for filling a gap structure without changing thin-film properties and without generating voids and pores, and the substrate processing method includes a first operation of forming a deposition inhibiting region on a structure including a gap by supplying a deposition inhibiting gas on the structure, a second operation of forming a thin film on the gap structure, and a third operation of removing the deposition inhibiting gas in the deposition inhibiting region by using at least one of gases used during the forming of the thin film.

公开(公告)号：US12040155B2

公开(公告)日：2024-07-16

申请号：US17472444

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Junichi Hashimoto ,  Toshiyuki Sasaki

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/52 ,  H01J37/147 ,  H01J37/32 ,  H01L21/02 ,  H01L21/263 ,  H01L21/768 ,  H10B43/50 ,  H10B43/27

CPC classification number: H01J37/1474 ,  C23C16/047 ,  C23C16/402 ,  C23C16/486 ,  C23C16/52 ,  H01J37/3233 ,  H01L21/02164 ,  H01L21/02266 ,  H01L21/2633 ,  H01L21/76819 ,  H10B43/50 ,  H01J2237/334 ,  H10B43/27

Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

公开(公告)号：US20240218509A1

公开(公告)日：2024-07-04

申请号：US18427691

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US20240191348A1

公开(公告)日：2024-06-13

申请号：US17908798

申请日：2021-07-19

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki YAMADA ,  Aki TAKEI ,  Yosuke KUROSAKI ,  Takashi HATTORI

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/52 ,  H01L21/311 ,  H01L21/67

CPC classification number: C23C16/4405 ,  C23C16/402 ,  C23C16/52 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115

Abstract: An object of the invention is to provide a technique that can decrease a reaction product or residual HF in a chamber. A semiconductor manufacturing apparatus includes an inlet to introduce a processing gas containing vapor of hydrogen fluoride and vapor of alcohol into a processing room in a processing container, a sample stage disposed in the processing room and having an upper surface on which a wafer to be processed is placed, and an introduction mechanism to introduce a polar molecular gas to the inlet.

公开(公告)号：US20240145236A1

公开(公告)日：2024-05-02

申请号：US18383109

申请日：2023-10-24

Applicant: ASM IP Holding B.V.

Inventor： Hyunchul Kim ,  Ryu Nakano ,  KiHun Kim ,  Rin Ha

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02274

Abstract: Provided is a method for improving the inhibiting characteristics in the upper portion of the gap. In one embodiment of the disclosure, a first inhibitor and a second inhibitor are supplied, therefore more inhibiting radicals may be generated and remove more reaction activation sites from the upper portion of the gap and improve the inhibiting characteristics in the upper portion compared to in the lower portion. The substrate processing method of the disclosure may facilitate further filling the gap with negative slope and complex structure.

公开(公告)号：US11935759B2

公开(公告)日：2024-03-19

申请号：US16866497

申请日：2020-05-04

Applicant: LOTUS APPLIED TECHNOLOGY, LLC

Inventor： Eric R. Dickey

IPC: C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/503 ,  H01L21/02 ,  H01L21/441

CPC classification number: H01L21/441 ,  C23C16/34 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/503 ,  H01L21/0228

Abstract: Atomic layer deposition (ALD) methods and barrier films are disclosed. A method of performing ALD includes placing a substrate proximal an electrode coupled to a power supply, exposing the substrate to an oxygen-containing gas or a nitrogen-containing gas at or below 0.8 Torr, and applying, with the power supply, a voltage to the electrode of at least 700 Volts to induce a plasma state in the oxygen-containing gas or the nitrogen-containing gas proximal the substrate. High quality barrier films can be made with the methods.

公开(公告)号：US20240018650A1

公开(公告)日：2024-01-18

申请号：US17812872

申请日：2022-07-15

Applicant: Houxun Miao

Inventor： Houxun Miao

IPC: C23C16/455 ,  G21K1/06 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/45529 ,  G21K1/067 ,  C23C16/402 ,  C23C16/403 ,  C23C16/34

Abstract: Disclosed herein is a method to produce hard x-ray phase gratings for x-ray multi-contrast imaging. The method is based on the conformal atomic layer deposition (ALD) of material with high x-ray refractive index decrement δ. The method is particularly suitable for submicron period x-ray phase grating fabrication. The fabrication process to produce x-ray phase gratings in this disclosure is compatible with standard semiconductor fabrication instrument and suitable for mass production.