公开(公告)号：US20090181174A1

公开(公告)日：2009-07-16

申请号：US12348513

申请日：2009-01-05

申请人： Kousuke YOSHIHARA ,  Tomohiro Iseki ,  Koji Takayanagi ,  Kentaro Yoshihara

发明人： Kousuke YOSHIHARA ,  Tomohiro Iseki ,  Koji Takayanagi ,  Kentaro Yoshihara

IPC分类号： B05D3/02

CPC分类号： H01L21/67248 ,  G03F7/162 ,  H01L21/6715

摘要： In the present invention, a substrate is adjusted in temperature such that its contact portion held on a substrate holding unit and its outer peripheral portion outside the contact portion are at different temperatures. The temperature of the contact portion is adjusted such that the contact portion and the substrate holding unit are at the same temperature when the substrate is held on the substrate holding unit. The temperature-adjusted substrate is then held and rotated by the substrate holding unit, and a coating solution is applied onto the rotating substrate to form a coating film with a uniform film thickness, so that even if the number of times of coating treatment for substrates increases, the film thickness of the coating film to be formed on the substrate can be made uniform.

摘要翻译： 在本发明中，调整基板的温度，使得其保持在基板保持单元上的接触部分及其外部接触部分外部的温度处于不同的温度。 调节接触部分的温度，使得接触部分和基板保持单元在基板被保持在基板保持单元上时处于相同的温度。 然后通过基板保持单元将调温后的基板保持旋转，将涂布液涂布在旋转基板上，形成膜厚均匀的涂膜，使得即使基板的涂布处理次数 可以使待在基板上形成的涂膜的膜厚均匀。

公开(公告)号：US20090087559A1

公开(公告)日：2009-04-02

申请号：US12205999

申请日：2008-09-08

申请人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

发明人： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

IPC分类号： B05D3/12 ,  B05C11/10

CPC分类号： G03F7/162

摘要： The present invention includes: a first step of discharging a coating solution from a nozzle to a center portion of the substrate to apply the coating solution on a surface of the substrate while rotating the substrate; a second step of decelerating, after the first step, the rotation of the substrate and continuously rotating the substrate; and a third step of accelerating, after the second step, the rotation of the substrate to dry the coating solution on the substrate, wherein: the substrate is rotated at a fixed speed of a first speed immediately before the first step; and in the first step, the rotation of the substrate which is at the first speed before start of the first step is gradually accelerated after the start of the first step so as to make the speed continuously change, and the acceleration of the rotation of the substrate is gradually decreased so as to make the speed of the rotation of the substrate converge in a second speed higher than the first speed at end of the first step.

摘要翻译： 本发明包括：第一步骤，将涂布液从喷嘴排出到基板的中心部分，以在旋转基板的同时将涂布溶液施加到基板的表面上; 在第一步骤之后使基板旋转并使基板连续旋转的第二步骤; 以及第三步骤，在所述第二步骤之后加速所述基板的旋转以使所述基板上的所述涂布溶液干燥，其中：所述基板在所述第一步骤之前以一速度的固定速度旋转; 并且在第一步骤中，在第一步骤开始之后以第一速度的基板的旋转在第一步骤开始之后逐渐加速，以使得速度连续变化，并且旋转的加速度 基板逐渐减小，以使得基板的旋转速度在第一步骤结束时以比第一速度高的第二速度会聚。

公开(公告)号：US20080069948A1

公开(公告)日：2008-03-20

申请号：US11851747

申请日：2007-09-07

申请人： Kousuke YOSHIHARA ,  Tomohiro Iseki

发明人： Kousuke YOSHIHARA ,  Tomohiro Iseki

IPC分类号： B05D3/12

CPC分类号： H01L21/6715 ,  G03F7/162

摘要： The present invention supplies a solvent to the front surface of a substrate while rotating the substrate. Subsequently, the substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at the first number of rotations. Thereafter, the substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, in application of the resist solution by spin coating, the consumption of the resist solution can be suppressed, and a high in-plane uniformity can be obtained for the film thickness of the resist film.

摘要翻译： 本发明在旋转衬底的同时向衬底的前表面提供溶剂。 随后，基板被加速旋转到第一转数，并且在加速旋转和第一转数旋转期间，将抗蚀剂溶液供应到基板的中心部分。 此后，基板减速旋转到第二转数，在基板的转数达到第二转数之后，将抗蚀剂溶液排出到基板。 然后将衬底加速旋转到高于第二转数的第三转数，使得衬底以第三转数旋转。 根据本发明，通过旋涂的抗蚀剂溶液的应用，可以抑制抗蚀剂溶液的消耗，并且可以获得抗蚀剂膜的膜厚度的高的面内均匀性。

公开(公告)号：US08697187B2

公开(公告)日：2014-04-15

申请号：US12907585

申请日：2010-10-19

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05D3/00

CPC分类号： H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

摘要： Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.

摘要翻译： 抗蚀剂涂覆处理用于在晶片边缘部分上施加抗蚀剂溶液以除去抗蚀剂膜。 激光照射单元在抗蚀剂涂布单元中施加激光。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 继续施加激光，溶剂供给喷嘴移动到边缘部分上方的位置，并在边缘部分上的抗蚀剂膜上提供溶剂。 溶剂溶解并除去边缘部分上的抗蚀剂膜。

公开(公告)号：US07520936B2

公开(公告)日：2009-04-21

申请号：US10774423

申请日：2004-02-10

申请人： Shinji Nagashima ,  Tomohiro Iseki

发明人： Shinji Nagashima ,  Tomohiro Iseki

IPC分类号： B05C11/00 ,  B05C5/00 ,  F26B3/34

CPC分类号： H01L21/67178 ,  B05D3/0209 ,  B05D3/0254 ,  B05D3/067 ,  H01L21/67109 ,  H01L21/67115

摘要： The present invention is a hardening processing apparatus for heating a substrate coated with a coating solution to harden the coating film on the substrate, which includes a first processing chamber for mounting the substrate coated with the coating solution on a heating plate and heating the substrate to a predetermined temperature on a one-by-one basis; a first irradiation unit provided in the first processing chamber, for irradiating the substrate mounted on the heating plate with ultraviolet light; and a second processing chamber connected in a communicating manner to the first processing chamber, for mounting the substrate coated with the coating solution on a temperature adjusting plate and adjusting the substrate to a temperature lower than a processing temperature of hardening processing on a one-by-one basis, in which the substrate is heated by the heating plate while being irradiated with the ultraviolet light by the first irradiation unit so that the coating film on the substrate is hardened. Accordingly, it is possible to harden the coating film at a lower temperature than that in the case of no irradiation of ultraviolet light so as to prevent occurrence of adverse effects due to heat to devices.

摘要翻译： 本发明是一种硬化处理装置，用于对涂覆有涂层溶液的基材进行加热以使基材上的涂膜硬化，该基材包括用于将涂布有涂布溶液的基材安装在加热板上并将基材加热至 一个一个的预定温度; 设置在第一处理室中的第一照射单元，用于用紫外线照射安装在加热板上的基板; 以及第二处理室，以与第一处理室的连通方式连接，用于将涂覆有涂布溶液的基板安装在温度调节板上，并将基板调整到低于硬化处理的加工温度的温度， 一个基础，其中通过第一照射单元用紫外线照射基板被加热板加热，使得基板上的涂膜硬化。 因此，可以在比没有紫外线照射的情况下更低的温度下使涂膜硬化，从而防止由于热而对装置产生不利影响。

公开(公告)号：US07832352B2

公开(公告)日：2010-11-16

申请号：US11574888

申请日：2005-09-13

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05B5/00 ,  B05B3/00 ,  B05B7/06

CPC分类号： H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

摘要： To perform a series of resist coating treatments from application of a resist solution to removal of a resist film on a wafer edge portion in a shorter time.A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.

摘要翻译： 为了在较短时间内从抗蚀剂溶液施加到晶片边缘部分上去除抗蚀剂膜，进行一系列光刻胶涂覆处理。 在抗蚀剂涂布单元中设置用于施加激光的激光照射单元。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 在外围部分的抗蚀剂膜干燥之后，继续施加激光，并且溶剂供应喷嘴移动到晶片的边缘部分上方的位置，并将溶剂供应到晶片的边缘部分上的抗蚀剂膜 。 溶剂的供应溶解并除去晶片边缘部分上的抗蚀剂膜。

公开(公告)号：US20110033626A1

公开(公告)日：2011-02-10

申请号：US12907585

申请日：2010-10-19

申请人： Yoshiteru FUKUDA ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru FUKUDA ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05D5/00 ,  B05D3/02 ,  B05D3/00

CPC分类号： H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

摘要： Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.

摘要翻译： 抗蚀剂涂覆处理用于在晶片边缘部分上施加抗蚀剂溶液以除去抗蚀剂膜。 激光照射单元在抗蚀剂涂布单元中施加激光。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 继续施加激光，溶剂供给喷嘴移动到边缘部分上方的位置，并在边缘部分上的抗蚀剂膜上提供溶剂。 溶剂溶解并除去边缘部分上的抗蚀剂膜。

公开(公告)号：US20060068110A1

公开(公告)日：2006-03-30

申请号：US11232241

申请日：2005-09-22

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05D5/00

CPC分类号： H01L21/67184 ,  H01L21/6708 ,  H01L21/6715

摘要： In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.

公开(公告)号：US07479190B2

公开(公告)日：2009-01-20

申请号：US11232241

申请日：2005-09-22

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05C11/00 ,  B05B7/06 ,  B05B3/00

CPC分类号： H01L21/67184 ,  H01L21/6708 ,  H01L21/6715

摘要： In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.

摘要翻译： 在本发明中，在涂布处理装置中设置多个用于溶解度参数不同的溶剂的溶剂供给喷嘴。 对于在边缘冲洗时使用的溶剂供给喷嘴，选择将溶解度参数与涂布溶液中所含的涂布溶剂的溶解度参数设定为不同的设定值以上的除去溶剂的溶剂供给喷嘴。 在涂布处理中，将涂布液从涂布液供给喷嘴排出到旋转基板的中央部，形成具有规定膜厚的溶液膜。 在形成之后，立即开始边缘冲洗，底物上的涂布液不干燥，其中从选择的溶剂供应喷嘴将去除溶剂供应到基材的周边部分。 在这种情况下，所提供的去除溶剂将涂布溶液排斥在基材上，从而仅适当地除去外围部分上的涂布溶液。 根据本发明，可以在更短的时间内进行包括边缘冲洗的一系列涂布处理。

公开(公告)号：US20080193654A1

公开(公告)日：2008-08-14

申请号：US11574888

申请日：2005-09-13

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05D3/02 ,  B05B17/04

CPC分类号： H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

摘要： A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.

摘要翻译： 在抗蚀剂涂布单元中设置用于施加激光的激光照射单元。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 在外围部分的抗蚀剂膜干燥之后，继续施加激光，并且溶剂供应喷嘴移动到晶片的边缘部分上方的位置，并将溶剂供应到晶片的边缘部分上的抗蚀剂膜 。 溶剂的供应溶解并除去晶片边缘部分上的抗蚀剂膜。