Input device and input method
    21.
    发明授权
    Input device and input method 有权
    输入设备和输入法

    公开(公告)号:US08952870B2

    公开(公告)日:2015-02-10

    申请号:US13239905

    申请日:2011-09-22

    申请人: Takashi Matsumoto

    发明人: Takashi Matsumoto

    摘要: An input device includes a body unit, a first touch type position detection unit which detects a first touch position of a human body on a first detection surface of the body unit, a second touch type position detection unit which detects a second touch position of the human body on a second detection surface of the body unit, the second detection surface being on an opposite side of the body unit as the first detection surface, and a detection area restriction unit which restricts an area, which can be detected by the second touch type position detection unit, on the second detection surface according to information of the first touch position and information determined in advance. The information determined in advance is data indicating a relation between the first touch position on the first detection surface and the restricted area on the second detection surface.

    摘要翻译: 输入装置包括主体单元,第一触摸型位置检测单元,其检测身体单元的第一检测表面上的人体的第一触摸位置;第二触摸式位置检测单元,其检测第二触摸位置检测单元 人体在身体单元的第二检测表面上,第二检测表面与身体单元的与第一检测表面相反的一侧,以及检测区域限制单元,其限制可以由第二触摸检测的区域 类型位置检测单元,根据第一触摸位置的信息和预先确定的信息在第二检测表面上。 预先确定的信息是指示第一检测表面上的第一触摸位置与第二检测表面上的限制区域之间的关系的数据。

    Carbon nanotube forming method and pre-treatment method therefor
    22.
    发明授权
    Carbon nanotube forming method and pre-treatment method therefor 有权
    碳纳米管的形成方法及其预处理方法

    公开(公告)号:US08728917B2

    公开(公告)日:2014-05-20

    申请号:US13403346

    申请日:2012-02-23

    IPC分类号: H01L21/20 H01L21/36

    摘要: A carbon nanotube forming method including providing a target substrate to be processed, a catalytic metal layer being formed on a surface of the target substrate; producing catalytic fine metal particles whose surfaces are oxidized by action of an oxygen plasma on the catalytic metal layer at a temperature T1; and activating the oxidized surfaces of the catalytic fine metal particles by reducing the oxidized surfaces of the catalytic fine metal particles by action of a hydrogen plasma on the catalytic fine metal particles at a temperature T2 higher than the temperature T1. The method further includes growing a carbon nanotube on the activated catalytic fine metal particles by thermal CVD at a temperature T3.

    摘要翻译: 一种碳纳米管形成方法,包括提供待加工的靶基板,在所述靶基板的表面上形成催化金属层; 产生催化金属微粒,其表面在温度T1下在催化金属层上通过氧等离子体的作用而被氧化; 以及在高于温度T1的温度T2下,通过氢等离子体在催化金属微粒上的还原催化金属微粒的氧化表面来活化催化金属微粒的氧化表面。 该方法还包括在温度T3下通过热CVD在活化的催化金属微粒上生长碳纳米管。

    Method for facilitating social networking based on fashion-related information
    24.
    发明授权
    Method for facilitating social networking based on fashion-related information 有权
    基于时尚相关信息促进社交网络的方法

    公开(公告)号:US08386486B2

    公开(公告)日:2013-02-26

    申请号:US12166581

    申请日:2008-07-02

    IPC分类号: G06F7/00

    CPC分类号: G06F17/30943 G06Q30/02

    摘要: One embodiment of the present invention provides a system for facilitating social networking based on fashion-related information. During operation, the system receives fashion-related information from a user. Next, the system extracts the user's fashion preferences from the received information and compares the user's fashion preference with other users' fashion preferences. Finally, the system groups users based on similarity of their fashion preferences.

    摘要翻译: 本发明的一个实施例提供了一种基于时尚相关信息促进社交网络的系统。 在操作期间,系统从用户接收与时尚相关的信息。 接下来,系统从接收到的信息中提取用户的时尚偏好,并将用户的时尚偏好与其他用户的时尚偏好进行比较。 最后,系统根据用户的时尚偏好相似度对用户进行分组。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    26.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20120270390A1

    公开(公告)日:2012-10-25

    申请号:US13541229

    申请日:2012-07-03

    IPC分类号: H01L21/768

    摘要: In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.

    摘要翻译: 在半导体器件中,铜互连之间的电容降低,并且同时提高绝缘击穿,并且通过包括以下步骤的制造方法采取不对准的对策:包括在绝缘膜上方形成包含铜作为主要成分的互连 基板,形成绝缘膜和用于储存器图案的隔离绝缘膜,形成能够抑制或防止铜在互连的上表面和侧表面上以及在绝缘膜和绝缘膜上方形成的绝缘膜,形成 绝缘膜的绝缘膜形成为使得相互连接的相对侧面上方的沉积速率大于其下方的沉积速率,以形成相邻互连之间的气隙,最后将绝缘膜平坦化 膜层间CMP。

    Voltage controlled oscillator
    27.
    发明授权
    Voltage controlled oscillator 失效
    压控振荡器

    公开(公告)号:US08264296B2

    公开(公告)日:2012-09-11

    申请号:US12929775

    申请日:2011-02-15

    申请人: Takashi Matsumoto

    发明人: Takashi Matsumoto

    IPC分类号: H03B5/32

    CPC分类号: H03B5/368 H03B5/1243

    摘要: A voltage controlled oscillator (VCO) securing a wide range of variable amount of oscillatory frequency is provided. In the VCO, a resistor R1 and a capacitor C1 are connected in series on a line of a crystal resonator and a control voltage supply terminal, a cathode of a variable-capacitance diode VD1 is connected between the R1 and the C1, and an anode of the VD1 is grounded. A parallel-connected circuit is disposed between the C1 and a port connected with the crystal resonator, the parallel-connected circuit including a variable-capacitance diode VD2 and a capacitor C3 connected in series, an expansion coil L1, and a Q dump resistor R6 which are connected in parallel. The parallel-connected circuit on an input side is grounded via a resistor R4, and a point between the R1 and the C1 and a point between the VD2 and the C3 are connected via a resistor R5.

    摘要翻译: 提供了一种稳定振荡频率范围广泛的压控振荡器(VCO)。 在VCO中,电阻器R1和电容器C1串联连接在晶体谐振器和控制电压端子的一行上,可变电容二极管VD1的阴极连接在R1与C1之间,阳极 的VD1接地。 并联电路设置在C1和与晶体谐振器连接的端口之间,并联电路包括串联连接的可变电容二极管VD2和电容器C3,扩展线圈L1和Q转换电阻器R6 它们并联连接。 输入侧的并联电路通过电阻R4接地,R1与C1之间的点与VD2与C3之间的点通过电阻R5连接。

    High-frequency colpitts circuit
    28.
    发明授权
    High-frequency colpitts circuit 失效
    高频弹簧电路

    公开(公告)号:US08154355B2

    公开(公告)日:2012-04-10

    申请号:US12654606

    申请日:2009-12-24

    申请人: Takashi Matsumoto

    发明人: Takashi Matsumoto

    IPC分类号: H03B5/32

    CPC分类号: H03B5/36

    摘要: A high-frequency Colpitts circuit having a feedback transistor Q2 in addition to an oscillation transistor Q1 is provided, wherein a collector of the transistor Q1 is connected to a base of the transistor Q2, a supply voltage is applied to a collector of the transistor Q2 through a resistance R5 and is connected to an output terminal, the collector is connected to a base of the transistor Q1 through a feedback resistance Rf, a crystal oscillator and one end of capacitors C1 and C2 connected in series are connected to the base, the other end of the capacitors is grounded, and a point between the capacitors C1 and C2 is connected to an emitter of the transistor Q1 and is grounded through a resistance R4.

    摘要翻译: 提供了具有除了振荡晶体管Q1之外的反馈晶体管Q2的高频Colpitts电路,其中晶体管Q1的集电极连接到晶体管Q2的基极,电源电压被施加到晶体管Q2的集电极 通过电阻R5并连接到输出端子,集电极通过反馈电阻Rf连接到晶体管Q1的基极,晶体振荡器和串联连接的电容器C1和C2的一端连接到基极, 电容器的另一端接地,并且电容器C1和C2之间的点连接到晶体管Q1的发射极,并通过电阻R4接地。

    DC-DC converter and control method thereof
    29.
    发明授权
    DC-DC converter and control method thereof 有权
    DC-DC转换器及其控制方法

    公开(公告)号:US07936156B2

    公开(公告)日:2011-05-03

    申请号:US12136579

    申请日:2008-06-10

    IPC分类号: G05F1/40

    CPC分类号: H02M3/1588 Y02B70/1466

    摘要: A first power supply line and having a first conductivity type a second transistor coupled between the first transistor and a second power supply line, and having the first conductivity type an output unit driving a first control signal causing the first transistor to become conductive, based on a drive voltage, and outputting the first control signal to the first transistor and a boot strap circuit including a capacitor having a first end coupled to a node of the first transistor and the second transistor and supplying the output unit with the drive voltage based on the capacitor, wherein an electric potential of the first end is reduced before the first transistor becomes conductive.

    摘要翻译: 第一电源线并具有第一导电类型,第二晶体管耦合在第一晶体管和第二电源线之间,并且具有第一导电类型,驱动第一控制信号使第一晶体管导通的输出单元基于 驱动电压,并且将第一控制信号输出到第一晶体管,以及引导电路,其包括具有耦合到第一晶体管和第二晶体管的节点的第一端的电容器,并且基于该第一晶体管提供驱动电压 电容器,其中在所述第一晶体管导通之前所述第一端的电位减小。

    CONTROL DEVICE FOR MOBILE BODY
    30.
    发明申请
    CONTROL DEVICE FOR MOBILE BODY 有权
    移动体控制装置

    公开(公告)号:US20110022232A1

    公开(公告)日:2011-01-27

    申请号:US12841603

    申请日:2010-07-22

    IPC分类号: G05B15/00

    CPC分类号: B62D57/032

    摘要: A control device for a mobile body makes it possible to smoothly correct the deviation of an actual posture of a base body of a mobile body, which travels with the base body thereof moving up and down, from a desired posture of the base body while restraining an overshoot or an undershoot from occurring. To determine a required manipulated variable according to a feedback control law in order to converge a state amount deviation related to the posture of the base body of the mobile body to zero, the feedback gain of the feedback control law is determined by using the time series in a period from current time to predetermined time in the future in the time series of a desired inertial force of the mobile body or the base body. The required manipulated variable is determined by the calculation of the feedback control law on the basis of the determined feedback gain and an observed value of the state amount deviation.

    摘要翻译: 用于移动体的控制装置使得可以平滑地校正移动体的基体的实际姿态与基体的所需姿势同时上下移动的基体的偏离,同时抑制 发生过冲或下冲。 为了将与移动体的基体的状态相关的状态量偏差收敛到零,根据反馈控制律确定所需的操作变量,反馈控制律的反馈增益通过使用时间序列 在从移动体或基体的期望的惯性力的时间序列中的从现在到现在的时间到预定时间的期间。 所需的操纵变量通过基于确定的反馈增益和状态量偏差的观测值的反馈控制律的计算来确定。