公开(公告)号：US08338237B2

公开(公告)日：2012-12-25

申请号：US12841316

申请日：2010-07-22

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

IPC分类号： H01L21/8234 ,  H01L33/08

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

公开(公告)号：US20070212855A1

公开(公告)日：2007-09-13

申请号：US11684447

申请日：2007-03-09

申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

IPC分类号： H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer or thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层或薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

公开(公告)号：US20060148217A1

公开(公告)日：2006-07-06

申请号：US11292257

申请日：2005-12-01

申请人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

发明人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

摘要翻译： 本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到 形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。 脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。 选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。

公开(公告)号：US06900082B2

公开(公告)日：2005-05-31

申请号：US10373378

申请日：2003-02-24

申请人： Man Wong ,  Tianfu Ma ,  Zhiguo Meng

发明人： Man Wong ,  Tianfu Ma ,  Zhiguo Meng

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/2022

摘要： The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.

摘要翻译： 本发明提供一种金属化的横向结晶多晶硅的形成方法，其中金属残渣被还原。 使用金属结晶诱导剂如镍或镍化合物进行第一低温横向结晶。 然后进行第二横向结晶，其可以是使用来自第一结晶的金属残余物作为金属结晶诱导剂的低温结晶，或者可以是不需要金属的高温结晶。