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51 条记录 (耗时 0.019 秒)

    Method of annealing polycrystalline silicon using solid-state laser and devices built thereon
    1.
    发明申请
    Method of annealing polycrystalline silicon using solid-state laser and devices built thereon 有权
    使用固态激光器退火多晶硅的方法和其上构建的器件

    公开(公告)号：US20060148217A1

    公开(公告)日：2006-07-06

    申请号：US11292257

    申请日：2005-12-01

    申请人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

    发明人： Man Wong ,  Hoi Kwok ,  Zhiguo Meng

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757

    摘要： The invention provides a method of forming polycrystalline silicon comprising the steps of: forming a layer of amorphous silicon, forming a layer of metal or metal-containing compound on the layer of amorphous silicon, annealing the layer of amorphous silicon and said layer of metal to form a polycrystalline silicon layer, and irradiating the polycrystalline silicon layer with two different harmonics of a pulsed laser. The pulsed laser is preferably a solid-state laser such as a Nd-Yag laser. One harmonic is chosen such that it is preferentially absorbed by defects in the polycrystalline silicon layer, the other harmonic is absorbed by the bulk polycrystalline silicon.

    摘要翻译： 本发明提供一种形成多晶硅的方法，包括以下步骤：形成非晶硅层，在非晶硅层上形成金属或含金属化合物层，将非晶硅层和所述金属层退火到 形成多晶硅层，并用脉冲激光的两个不同谐波照射多晶硅层。 脉冲激光器优选为诸如Nd-Yag激光器的固态激光器。 选择一个谐波使得其被多晶硅层中的缺陷优先吸收，另一个谐波被体多晶硅吸收。

    Ultrathin film multi-crystalline photovoltaic device
    3.
    发明授权
    Ultrathin film multi-crystalline photovoltaic device 有权
    超薄膜多晶光伏器件

    公开(公告)号：US09299863B2

    公开(公告)日：2016-03-29

    申请号：US12437236

    申请日：2009-05-07

    申请人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    发明人： Hoi Sing Kwok ,  Zhiguo Meng ,  Man Wong

    IPC分类号： H01L31/0236 ,  H01L31/076 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

    CPC分类号： H01L31/0236 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/076 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell photovoltaic device using ultrathin films of polycrystalline silicon and deep uneven surface structures is disclosed. According to one embodiment, the uneven structures include one or more pits having a depth of at least 10 microns. According to another embodiment, the uneven structures include one or more cones or columns having a height or at least 10 microns. Because the unevenness of the structures, the photovoltaic device is able to use a very thin layer of polycrystalline silicon to effectively trap and absorb light.

    摘要翻译： 公开了一种使用多晶硅和深凹凸表面结构的超薄膜的太阳能电池光伏器件。 根据一个实施例，不平坦结构包括具有至少10微米深度的一个或多个凹坑。 根据另一个实施例，不平坦结构包括具有高度或至少10微米的一个或多个锥体或柱。 由于结构的不均匀性，光伏器件能够使用非常薄的多晶硅层来有效地捕获和吸收光。

    Metal-induced crystallization of amorphous silicon in thin film transistors
    5.
    发明授权
    Metal-induced crystallization of amorphous silicon in thin film transistors 有权
    薄膜晶体管中非晶硅的金属诱导结晶

    公开(公告)号：US07790580B2

    公开(公告)日：2010-09-07

    申请号：US11684447

    申请日：2007-03-09

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

    摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

    摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

    Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors
    6.
    发明申请
    Metal-Induced Crystallization of Amorphous Silicon in Thin Film Transistors 有权
    非晶硅金属诱导结晶在薄膜晶体管中的应用

    公开(公告)号：US20110012124A1

    公开(公告)日：2011-01-20

    申请号：US12841316

    申请日：2010-07-22

    申请人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    发明人： Hoi Sing Kwok ,  Man Wong ,  Zhiguo Meng ,  Shuyun Zhao ,  Chunya Wu

    IPC分类号： H01L33/08 ,  H01L21/8234

    CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

    摘要： The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.

    摘要翻译： 本发明提供一种形成包括多晶半导体膜的薄膜晶体管的方法。 该方法包括将非晶半导体薄膜的第一层沉积到衬底上; 在第一非晶半导体薄膜层上沉积第二层薄膜; 图案化第二层薄膜，使得第一层非晶半导体薄膜在选定的位置曝光; 将溶液或气相中的第一和第二层薄膜暴露于含镍化合物; 去除第二层薄膜; 以及在升高的温度下使所述第一非晶半导体薄膜层退火，使得所述第一非晶半导体薄膜层转变为多晶半导体薄膜。

    Polysilicon material and semiconductor devices formed therefrom
    9.
    发明授权
    Polysilicon material and semiconductor devices formed therefrom 有权
    由此形成的多晶硅材料和半导体器件

    公开(公告)号：US06953716B2

    公开(公告)日：2005-10-11

    申请号：US10740537

    申请日：2003-12-22

    申请人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng ,  Mingxiang Wang

    发明人： Man Wong ,  Hoi Sing Kwok ,  Zhiguo Meng ,  Mingxiang Wang

    IPC分类号： H01L21/00 ,  H01L21/04 ,  H01L21/20 ,  H01L21/324 ,  H01L21/36

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022

    摘要： A metal induced lateral crystallization (MILC) poly-silicon material is produced by depositing a metal in a predefined pattern on amorphous silicon, and heat treating the silicon at a first temperature to form a MILC poly-Si material. The MILC poly-Si material is further heat treated at a second temperature higher than the first temperature to induce recrystallization. The second high temperature recrystallization step significantly enhances the material structure, and in particular the grain structure, of the poly-Si material with substantial benefits to the performance of semiconductor devices made therefrom.

    摘要翻译： 金属诱导横向结晶（MILC）多晶硅材料是通过在非晶硅上以预定图案沉积金属制造的，并在第一温度下热处理硅以形成MILC多晶硅材料。 在高于第一温度的第二温度下进一步对MILC多晶硅材料进行热处理以引发重结晶。 第二高温再结晶步骤显着地提高了多晶硅材料的材料结构，特别是晶粒结构，对由其制成的半导体器件的性能具有实质的益处。

    Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
    10.
    发明授权
    Methods for forming laterally crystallized polysilicon and devices fabricated therefrom 失效
    用于形成横向结晶多晶硅的方法及由其制造的器件

    公开(公告)号：US06900082B2

    公开(公告)日：2005-05-31

    申请号：US10373378

    申请日：2003-02-24

    申请人： Man Wong ,  Tianfu Ma ,  Zhiguo Meng

    发明人： Man Wong ,  Tianfu Ma ,  Zhiguo Meng

    IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/84

    CPC分类号： H01L21/02672 ,  H01L21/2022

    摘要： The present invention provides a method for forming metal-induced laterally crystallized polysilicon in which the metal residue is reduced. A first low temperature lateral crystallization is performed using a metal crystallization-inducing agent such as nickel or a nickel compound. A second lateral crystallization is then carried out which may be either a low-temperature crystallization using metal residue from the first crystallization as the metal crystallization-inducing agent, or may be a high temperature crystallization that does not require a metal.

    摘要翻译： 本发明提供一种金属化的横向结晶多晶硅的形成方法，其中金属残渣被还原。 使用金属结晶诱导剂如镍或镍化合物进行第一低温横向结晶。 然后进行第二横向结晶，其可以是使用来自第一结晶的金属残余物作为金属结晶诱导剂的低温结晶，或者可以是不需要金属的高温结晶。