公开(公告)号：US20180315827A1

公开(公告)日：2018-11-01

申请号：US15770468

申请日：2015-12-17

Applicant: Intel Corporation

Inventor： Sean T. MA ,  Willy RACHMADY ,  Matthew V. METZ ,  Chandra S. MOHAPATRA ,  Gilbert DEWEY ,  Nadia M. RAHHAL-ORABI ,  Jack T. KAVALIEROS ,  Anand S. MURTHY

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/205 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28264 ,  H01L29/1054 ,  H01L29/205 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7851

Abstract: An apparatus including a non-planar body on a substrate, the body including a channel on a blocking material, and a gate stack on the body, the gate stack including a first gate electrode material including a first work function disposed on the channel material and a second gate electrode material including a second work function different from the first work function disposed on the channel material and on the blocking material. A method including forming a non-planar body on a substrate, the non-planar body including a channel on a blocking material, and forming a gate stack on the body, the gate stack including a first gate electrode material including a first work function disposed on the channel and a second gate electrode material including a second work function different from the first work function disposed on the channel and on the blocking material.