公开(公告)号：US20200350495A1

公开(公告)日：2020-11-05

申请号：US16402126

申请日：2019-05-02

Applicant: International Business Machines Corporation

Inventor： Ashim Dutta ,  Chih-Chao Yang ,  Daniel C. Edelstein ,  Karthik Yogendra ,  John C. Arnold

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01F41/34

Abstract: MRAM devices with in-situ encapsulation are provided. In one aspect, a method of forming an MRAM device includes: patterning an MRAM stack disposed on a dielectric into individual memory cell stacks, wherein the MRAM stack includes a bottom electrode, a MTJ, and a top electrode, and wherein the patterning is performed using an intermediate angle IBE landing on the dielectric; removing redeposited metal from the memory cell stacks using a high angle IBE; redepositing the dielectric along the sidewalls of the memory cell stacks using a low angle IBE to form a first layer of dielectric encapsulating the memory cell stacks; and depositing a second layer of dielectric, wherein the first/second layers of dielectric form a bilayer dielectric spacer structure, wherein the patterning, removing of the redeposited metal, and redepositing the dielectric steps are all performed in-situ. An MRAM device is also provided.

公开(公告)号：US20190189914A1

公开(公告)日：2019-06-20

申请号：US15841872

申请日：2017-12-14

Applicant: International Business Machines Corporation

Inventor： Hiroyuki Miyazoe ,  Nathan P. Marchack ,  HsinYu Tsai ,  Eugene J. O'Sullivan ,  Karthik Yogendra

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

Abstract: A method of forming a semiconductor structure includes forming a first spacer material over two or more mandrels disposed over a magnetoresistive random-access memory (MRAM) stack. The method also includes performing a first sidewall image transfer of the two or more mandrels to form a first set of fins of the first spacer material over the MRAM stack, and performing a second sidewall image transfer to form a plurality of pillars of the first spacer material over the MRAM stack. The pillars of the first spacer material form top electrodes for a plurality of MRAM cells patterned from the MRAM stack.