公开(公告)号：US20190305039A1

公开(公告)日：2019-10-03

申请号：US16307588

申请日：2017-06-19

申请人： IQE plc

发明人： Wang Nang Wang ,  Andrew Clark ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L27/20 ,  H01L29/20 ,  H01L29/778 ,  H01L23/66 ,  H03H9/02 ,  H03H9/54 ,  H03H9/56 ,  H03H3/02

摘要： Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.

公开(公告)号：US10418457B2

公开(公告)日：2019-09-17

申请号：US16138629

申请日：2018-09-21

申请人： IQE plc

发明人： Rytis Dargis ,  Richard Hammond ,  Andrew Clark ,  Rodney Pelzel

IPC分类号： H01L27/06 ,  H01L29/737 ,  H01L29/51 ,  H01L41/047 ,  H01L21/285 ,  H01L29/45

摘要： The structures and methods disclosed herein include changing composition of a metal alloy layer in an epitaxial electrode material to achieve tunable work functions for the electrode. In one example, the tunable work function is achieved using a layered structure, in which a crystalline rare earth oxide (REO) layer is epitaxially over a substrate or semiconductor, and a metal layer is over the crystalline REO layer. A semiconductor layer is thus in turn epitaxially grown over the metal layer, with a metal alloy layer over the semiconductor layer such that the ratio of constituents in the metal alloy is used to tune the work function of the metal layer.

公开(公告)号：US20190227233A1

公开(公告)日：2019-07-25

申请号：US16252474

申请日：2019-01-18

申请人： IQE plc

发明人： Andrew Clark ,  Rich Hammond ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： G02B6/122 ,  G02B6/13 ,  H01L29/20 ,  H01L29/04

摘要： Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.

公开(公告)号：US10332857B2

公开(公告)日：2019-06-25

申请号：US15612355

申请日：2017-06-02

申请人： IQE, plc

发明人： Andrew Clark ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01S3/16 ,  H01S3/09 ,  H01S5/30 ,  H01L23/00 ,  H01L21/02

摘要： Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.

公开(公告)号：US20190172923A1

公开(公告)日：2019-06-06

申请号：US16257707

申请日：2019-01-25

申请人： IQE plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

公开(公告)号：US20190139761A1

公开(公告)日：2019-05-09

申请号：US16306547

申请日：2017-06-02

申请人： IQE plc

发明人： Andrew Clark ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

摘要： A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.

公开(公告)号：US10128350B2

公开(公告)日：2018-11-13

申请号：US15712002

申请日：2017-09-21

申请人： IQE, plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US20180012858A1

公开(公告)日：2018-01-11

申请号：US15612797

申请日：2017-06-02

申请人： IQE, plc

发明人： Andrew Clark ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L23/00

摘要： Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.

公开(公告)号：US11611001B2

公开(公告)日：2023-03-21

申请号：US17229992

申请日：2021-04-14

申请人： IQE plc

发明人： Andrew Clark ,  Rodney Pelzel ,  Richard Hammond

IPC分类号： H01L21/00 ,  H01L29/84 ,  H01L21/02 ,  H01L21/62

摘要： A layered structure (100) for transmission of an acoustic wave, the layered structure (100) comprising: a substrate layer (102); and a second layer (104) over the substrate layer (102), wherein the second layer (104) comprises a plurality of discrete portions (105) adjacent to each other, each discrete portion (105) of the plurality of discrete portions (105) comprising a first subregion (104A) and a second subregion (104B). Also an epitaxial layer (108), grown over the second layer (104), for transmission of the acoustic wave in a major plane of the epitaxial layer (108), wherein a periodicity (λ) of a wavelength of the acoustic wave to be transmitted through the epitaxial layer (108) is approximately equal to a sum of a width (dA) of the first subregion (104A) and a width (dB) of the second subregion (104B).

公开(公告)号：US11201451B2

公开(公告)日：2021-12-14

申请号：US16252334

申请日：2019-01-18

申请人： IQE plc

发明人： Rich Hammond ,  Rodney Pelzel ,  Drew Nelson ,  Andrew Clark ,  David Cheskis ,  Michael Lebby

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/42 ,  H01S5/10 ,  H01S5/026 ,  H01S5/40 ,  H01L33/10 ,  H01S5/34 ,  G02B5/08

摘要： Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.