公开(公告)号：US10923345B2

公开(公告)日：2021-02-16

申请号：US16088032

申请日：2017-03-16

申请人： IQE plc

发明人： Rytis Dargis ,  Andrew Clark ,  Rodney Pelzel

IPC分类号： H01L29/51 ,  H01L29/20 ,  H01L21/02

摘要： Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.

公开(公告)号：US10573686B2

公开(公告)日：2020-02-25

申请号：US16307588

申请日：2017-06-19

申请人： IQE plc

发明人： Wang Nang Wang ,  Andrew Clark ,  Rytis Dargis ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L27/20 ,  H01L29/20 ,  H01L29/778 ,  H01L23/66 ,  H03H9/02 ,  H03H9/54 ,  H03H9/56 ,  H03H3/02

摘要： Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.

公开(公告)号：US10566944B2

公开(公告)日：2020-02-18

申请号：US16126840

申请日：2018-09-10

申请人： IQE plc

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H03H1/00 ,  H01L41/08 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17 ,  H01L23/66 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/778 ,  H01L41/083

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US20190221993A1

公开(公告)日：2019-07-18

申请号：US16252334

申请日：2019-01-18

申请人： IQE plc

发明人： Rich Hammond ,  Rodney Pelzel ,  Drew Nelson ,  Andrew Clark ,  David Cheskis ,  Michael Lebby

IPC分类号： H01S5/02 ,  H01S5/183 ,  H01S5/026 ,  H01S5/42 ,  H01S5/10

CPC分类号： H01S5/0206 ,  H01S5/0261 ,  H01S5/1071 ,  H01S5/18319 ,  H01S5/18361 ,  H01S5/34 ,  H01S5/4087 ,  H01S5/423

摘要： Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

公开(公告)号：US20190157834A1

公开(公告)日：2019-05-23

申请号：US16198391

申请日：2018-11-21

申请人： IQE plc

发明人： Andrew Clark ,  Rodney Pelzel ,  Andrew Johnson ,  Andrew Martin Joel

IPC分类号： H01S5/02 ,  H01S5/183 ,  H01S5/026 ,  H01S5/323

摘要： Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.

公开(公告)号：US20190122885A1

公开(公告)日：2019-04-25

申请号：US16093521

申请日：2017-04-10

申请人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby ,  Rodney Pelzel ,  IQE plc

发明人： Rytis Dargis ,  Andrew Clark ,  Michael Lebby ,  Rodney Pelzel

IPC分类号： H01L21/02 ,  H01L29/04

摘要： Layer structures are described for the formation of Group III-V semiconductor material over Si and Si . Various buffer layers and interfaces reduce the lattice strain between the Group III-V semiconductor material and the Si or Si layers, allowing for the epitaxial formation of high quality Group III-V semiconductor material.

公开(公告)号：US20190074365A1

公开(公告)日：2019-03-07

申请号：US16178495

申请日：2018-11-01

申请人： IQE plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US10075143B2

公开(公告)日：2018-09-11

申请号：US15342045

申请日：2016-11-02

申请人： IQE, PLC

发明人： Rodney Pelzel ,  Rytis Dargis ,  Andrew Clark ,  Howard Williams ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L27/06 ,  H03H1/00 ,  H01L21/00 ,  H01L29/737 ,  H01L23/66 ,  H01L29/66 ,  H01L29/778 ,  H01L41/08 ,  H01L41/083 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/17

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：US11355340B2

公开(公告)日：2022-06-07

申请号：US16742827

申请日：2020-01-14

申请人： IQE plc

发明人： Richard Hammond ,  Drew Nelson ,  Alan Gott ,  Rodney Pelzel ,  Andrew Clark

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/3063 ,  H01L23/66 ,  H01L29/04 ,  H01L29/06

摘要： A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

公开(公告)号：US11133389B2

公开(公告)日：2021-09-28

申请号：US16782296

申请日：2020-02-05

申请人： IQE plc

发明人： Andrew Clark ,  Rodney Pelzel ,  Mukul Debnath ,  Rytis Dargis ,  Robert Yanka

IPC分类号： H01L29/205

摘要： A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.