公开(公告)号：US20230389451A1

公开(公告)日：2023-11-30

申请号：US17826355

申请日：2022-05-27

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Matthias Markert

IPC: H01L45/00

CPC classification number: H01L45/1226 ,  H01L45/06 ,  H01L45/1286 ,  H01L45/1683

Abstract: A method includes providing a semiconductor substrate comprising a main surface, forming a dielectric region on the main surface, forming a recess in the dielectric region, forming a strip of phase change material within the recess, forming a heating element that is thermally coupled to the strip of phase change material, forming an interconnection region over the main surface before or after forming the recess, the interconnection region including a metallization layer and a dielectric layer, electrically connecting the strip of phase change material to a connecting one of the metallization layers from the interconnection region, and completing formation of the interconnection region after electrically connecting the strip of phase change material, wherein completing formation of the interconnection region includes forming an outer one of the dielectric layers from the interconnection region that is disposed over the connecting one of the metallization layers and comprises a planar upper surface.

公开(公告)号：US12212313B2

公开(公告)日：2025-01-28

申请号：US18496262

申请日：2023-10-27

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Hans Taddiken

IPC: H03K17/56 ,  H10B63/10

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

公开(公告)号：US20240404774A1

公开(公告)日：2024-12-05

申请号：US18800773

申请日：2024-08-12

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

公开(公告)号：US20230119033A1

公开(公告)日：2023-04-20

申请号：US18086211

申请日：2022-12-21

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H10N70/00 ,  H10N70/20

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

公开(公告)号：US20230021991A1

公开(公告)日：2023-01-26

申请号：US17870934

申请日：2022-07-22

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Hans Taddiken

IPC: H03K17/56

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

公开(公告)号：US20210320250A1

公开(公告)日：2021-10-14

申请号：US16844450

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H01L45/00

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.