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    Phase Change Switch with Multi Face Heater Configuration
    2.
    发明申请
    Phase Change Switch with Multi Face Heater Configuration 有权

    公开(公告)号：US20230119033A1

    公开(公告)日：2023-04-20

    申请号：US18086211

    申请日：2022-12-21

    Applicant: Infineon Technologies AG

    Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

    IPC: H10N70/00 ,  H10N70/20

    Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

    Phase Change Switch with Multi Face Heater Configuration
    3.
    发明申请
    Phase Change Switch with Multi Face Heater Configuration 有权

    公开(公告)号：US20210320250A1

    公开(公告)日：2021-10-14

    申请号：US16844450

    申请日：2020-04-09

    Applicant: Infineon Technologies AG

    Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

    IPC: H01L45/00

    Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

    Phase change switch with multi face heater configuration
    7.
    发明授权
    Phase change switch with multi face heater configuration 有权

    公开(公告)号：US11563174B2

    公开(公告)日：2023-01-24

    申请号：US16844450

    申请日：2020-04-09

    Applicant: Infineon Technologies AG

    Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

    IPC: H01L45/00

    Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US20150340277A1

    公开(公告)日：2015-11-26

    申请号：US14283242

    申请日：2014-05-21

    Applicant: Infineon Technologies AG

    Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

    IPC: H01L21/762 ,  H01L29/06

    CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

    Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

    Abstract translation: 根据各种实施例的用于制造半导体器件的方法可以包括：在半导体衬底的第一区域中形成开口，所述开口具有至少一个侧壁和底部; 将掺杂剂原子注入到所述开口的至少一个侧壁和底部中; 将所述半导体衬底的与所述第一区域横向相邻的第二区域的至少一部分配置为非晶区域或多晶区域中的至少一个; 以及在半导体衬底的第一和第二区域中的至少一个上形成互连。

    SWITCHING DEVICE, A COMMUNICATION DEVICE, AND A METHOD FOR PROCESSING A CARRIER
    10.
    发明申请
    SWITCHING DEVICE, A COMMUNICATION DEVICE, AND A METHOD FOR PROCESSING A CARRIER 有权
    切换装置，通信装置以及处理载体的方法

    公开(公告)号：US20150222317A1

    公开(公告)日：2015-08-06

    申请号：US14172925

    申请日：2014-02-05

    Applicant: Infineon Technologies AG

    Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

    IPC: H04B1/44

    CPC classification number: H04B1/44 ,  H01L21/324 ,  H01L29/1079 ,  H01L29/78

    Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

    Abstract translation: 根据各种实施例，开关装置可以包括：天线端子; 包括第一开关端子和第二开关端子的开关，所述第一开关端子耦合到所述天线端子，所述开关包括至少一个晶体管，所述至少一个晶体管至少包括氧区杂质浓度小于约3的硅区域， ×1017原子/ cm3; 以及耦合到所述第二开关终端的收发机终端，其中所述收发机终端被配置为提供经由所述天线终端接收的或被配置为接收经由所述天线终端发送的信号中的至少一个。

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