CHIPLET FIRST ARCHITECTURE FOR DIE TILING APPLICATIONS

    公开(公告)号:US20220115334A1

    公开(公告)日:2022-04-14

    申请号:US17556667

    申请日:2021-12-20

    Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a mold layer having a first surface and a second surface opposite the first surface, and a plurality of first dies embedded in the mold layer. In an embodiment, each of the plurality of first dies has a surface that is substantially coplanar with the first surface of the mold layer. In an embodiment, the electronic package further comprises a second die embedded in the mold layer. In an embodiment, the second die is positioned between the plurality of first dies and the second surface of the mold layer.

    NESTED INTERPOSER PACKAGE FOR IC CHIPS

    公开(公告)号:US20210005542A1

    公开(公告)日:2021-01-07

    申请号:US16502622

    申请日:2019-07-03

    Abstract: Embodiments disclosed herein include electronic packages and methods of forming electronic packages. In an embodiment, an electronic package comprises an interposer, where the interposer comprises a cavity that passes through the interposer, a through interposer via (TIV), and an interposer pad electrically coupled to the TIV. In an embodiment, the electronic package further comprises a nested component in the cavity, where the nested component comprises a component pad, and a die coupled to the interposer pad by a first interconnect and coupled to the component pad by a second interconnect. In an embodiment, the first interconnect and the second interconnect each comprise an intermediate pad, and a bump over the intermediate pad.

    INTERFACIAL LAYER FOR HIGH RESOLUTION LITHOGRAPHY (HRL) AND HIGH SPEED INPUT/OUTPUT (IO OR I/O) ARCHITECTURES

    公开(公告)号:US20190320537A1

    公开(公告)日:2019-10-17

    申请号:US15954040

    申请日:2018-04-16

    Abstract: Embodiments described herein are directed to interfacial layers and techniques of forming such interfacial layers. An interfacial layer having one or more light absorbing molecules is on a metal layer. The light absorbing molecule(s) may comprise a moiety exhibiting light absorbing properties. The interfacial layer can assist with improving adhesion of a resist layer to the metal layer and with improving use of one or more lithography techniques to fabricate interconnects and/or features using the resist and metal layers for a package substrate, a semiconductor package, or a PCB. For one embodiment, the interfacial layer includes, but is not limited to, an organic interfacial layer. Examples of organic interfacial layers include, but are not limited to, self-assembled monolayers (SAMs), constructs and/or variations of SAMs, organic adhesion promotor moieties, and non-adhesion promoter moieties.

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