利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.033 秒)

    High density non-volatile memory device
    22.
    发明授权
    High density non-volatile memory device 有权
    高密度非易失性存储器件

    公开(公告)号：US06657884B2

    公开(公告)日：2003-12-02

    申请号：US10053814

    申请日：2002-01-18

    申请人： David F. Bocian ,  Werner G. Kuhr ,  Jonathan Lindsey

    发明人： David F. Bocian ,  Werner G. Kuhr ,  Jonathan Lindsey

    IPC分类号： G11C1100

    CPC分类号： H01L51/0078 ,  B82Y10/00 ,  C07D487/22 ,  C07D519/00 ,  C07F17/02 ,  G11B9/14 ,  G11B9/149 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/15 ,  G11C2213/77 ,  H01L27/28 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/0595 ,  Y10S977/943

    摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

    摘要翻译： 本发明提供了可提供高存储密度（例如，10,15bit / cm 3）的电位置可允许有效读/写的新型高密度存储器件，其提供高度的容错能力，并且 适合有效的化学合成和芯片制造。 器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。 在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。

    Methods and intermediates for the synthesis of porphyrins
    24.
    发明申请
    Methods and intermediates for the synthesis of porphyrins 失效
    合成卟啉的方法和中间体

    公开(公告)号：US20070027311A1

    公开(公告)日：2007-02-01

    申请号：US11192934

    申请日：2005-07-29

    申请人： Jonathan Lindsey ,  Masahiko Taniguchi ,  Dazhong Fan

    发明人： Jonathan Lindsey ,  Masahiko Taniguchi ,  Dazhong Fan

    IPC分类号： C07D487/22 ,  C07D403/02

    CPC分类号： C07D403/04 ,  C07D487/22

    摘要： A method of making a porphyrin is carried out by: (a) condensing (i) a 1,9-bis(N,N-)dialkylaminomethyl)dipyrromethane of Formula II: with (ii) a dipyrromethane to produce a reaction product; then (b) oxidizing the reaction product; and then (c) optionally demetallating said reaction product to produce the porphyrin. The reaction is particularly useful for making substituted porphyrins with a wide range of substituents at the A and/or B (the 5 and/or 15) positions.

    摘要翻译： 通过以下方法进行卟啉的制备方法：（a）将（ⅰ）式Ⅱ的1,9-双（N，N-）二烷基氨基甲基）二吡咯烷与（ⅱ）二吡咯甲烷缩合生成反应产物; 然后（b）氧化反应产物; 然后（c）任选地使所述反应产物脱金属以产生卟啉。 该反应对于在A和/或B（5和/或15）位置制备具有宽范围取代基的取代卟啉是特别有用的。

    De novo synthesis of bacteriochlorins
    25.
    发明申请
    De novo synthesis of bacteriochlorins 有权

    公开(公告)号：US20060194960A1

    公开(公告)日：2006-08-31

    申请号：US11357833

    申请日：2006-02-17

    申请人： Han-Je Kim ,  Jonathan Lindsey

    发明人： Han-Je Kim ,  Jonathan Lindsey

    IPC分类号： C07D487/22

    CPC分类号： C07D487/22 ,  C07D207/335 ,  C09B47/00 ,  G01N21/6486

    摘要： A method of making a bacteriochlorin is carried out by condensing a pair of compounds of Formula II to produce the bacteriochlorin, wherein R is an acetal or aldehyde group. The condensing may be carried out in an organic solvent, preferably in the presence of an acid. The bacteriochlorins are useful for a variety of purposes such as active agents in photodynamic therapy, luminescent compounds in flow cytometry, solar cells, light harvesting arrays, and molecular memory devices.

    Situ patterning of electrolyte for molecular information storage devices
    27.
    发明申请
    Situ patterning of electrolyte for molecular information storage devices 有权
    用于分子信息存储设备的电解质的原位图案化

    公开(公告)号：US20050207208A1

    公开(公告)日：2005-09-22

    申请号：US10837028

    申请日：2004-04-30

    申请人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Veena Misra

    发明人： David Bocian ,  Werner Kuhr ,  Jonathan Lindsey ,  Veena Misra

    IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C13/02 ,  H01L20060101 ,  H01L51/00 ,  H01L51/30 ,  H01M6/14 ,  H01M6/16 ,  H01M6/18

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0009 ,  H01L51/0021 ,  H01L51/005 ,  H01L51/0077 ,  H01L51/0595 ,  Y10S977/896 ,  Y10S977/943

    摘要： This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a is provided that involves contacting a surface/electrode with a compound if formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1 and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.

    摘要翻译： 本发明涉及混合电子中有机分子和电解质的组装方法。 在一个实施方案中，提供了一种方法，其包括使表面/电极与化合物接触，如果下列公式：RL 2 -ML 1 -Z 1 / Z 1是表面附着基团; L 1和L 2独立地是连接基或共价键; M是信息存储分子; 并且R是被保护或未被保护的反应性位点或基团; 其中所述接触导致通过所述表面附着基团将所述氧化还原活性部分附着到所述表面; 和ii）使表面附着的信息存储分子与具有下式的电解质接触：J-Q其中J是带电部分（例如电解质）; 并且Q是与反应性基团（R）反应并且将J附着到信息存储分子的反应性基团，从而对表面上的电解质进行图案化。