公开(公告)号：US5367155A

公开(公告)日：1994-11-22

申请号：US959811

申请日：1992-10-13

申请人： Johannes K. E. Colditz ,  Henricus F. C. Diebels ,  Tiemen Poorter ,  August L. H. Simons ,  Johnny W. Van Der Velden

发明人： Johannes K. E. Colditz ,  Henricus F. C. Diebels ,  Tiemen Poorter ,  August L. H. Simons ,  Johnny W. Van Der Velden

IPC分类号： G21K4/00 ,  H01J29/38 ,  H01J31/50

CPC分类号： G21K4/00 ,  H01J29/385 ,  H01J31/501 ,  G21K2004/06 ,  H01J2231/50036 ,  H01J2231/50063

摘要： In an X-ray image intensifier tube an entrance section is optimized in respect of image quality, optical aberrations and efficiency. To achieve this, notably in order to avoid photocathode charging phenomena, a separating layer having an adapted electrical transverse conduction is provided. In order to reduce scattered radiation, an edge portion of the entrance screen is deactivated for relevant examinations. In order to increase efficiency, use is made of a double phosphor layer having different X-ray absorption properties. In order to compensate for vignetting a radial variation of the thickness or of the radiation properties of a separating layer or of the luminescent layer itself is used.

摘要翻译： 在X射线图像增强管中，对于图像质量，光学像差和效率优化入口部分。 为了实现这一点，特别是为了避免光电阴极充电现象，提供了具有适应的电横向导电的分离层。 为了减少散射辐射，进入屏幕的边缘部分被禁用以进行相关的检查。 为了提高效率，使用具有不同X射线吸收特性的双荧光体层。 为了补偿渐晕，使用分离层或发光层本身的厚度或辐射特性的径向变化。

公开(公告)号：US4920287A

公开(公告)日：1990-04-24

申请号：US265660

申请日：1988-11-01

申请人： Cornelis D. Hartgring ,  Jan Dikken ,  Tiemen Poorter

发明人： Cornelis D. Hartgring ,  Jan Dikken ,  Tiemen Poorter

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H03K17/10 ,  H03K19/003 ,  H03K19/0948

CPC分类号： H03K19/00361 ,  H03K19/00315

摘要： A digital circuit with a 5 V power supply voltage in which NMOS transistors constructed in sub-micron technology are protected against excessive field strengths by means of additional transistors in order to prevent so-called "hot carrier stress" for this purpose the additional transistors have a greater channel length and/or a higher threshold voltage.