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    Structure for maintaining gap of paper money discriminating apparatus
    26.
    发明申请
    Structure for maintaining gap of paper money discriminating apparatus 有权
    保持纸币识别装置间隙的结构

    公开(公告)号：US20080006507A1

    公开(公告)日：2008-01-10

    申请号：US11824123

    申请日：2007-06-29

    Applicant: Jun Kim

    Inventor： Jun Kim

    IPC: G07D7/00

    CPC classification number: G07D11/0036

    Abstract: A structure maintains a gap in a paper money discriminating apparatus that may be provided in an automatic teller machine. The structure may include a paper money discriminating sensor that is provided in an upper body to discriminate whether a paper money to be conveyed along a conveyance path is counterfeit money, a lower body that is provided so as to face the paper money discriminating sensor with a predetermined gap therebetween, and spacing protrusions that protrude upward from an upper surface of the lower body and come in contact with both end portions of the paper money discriminating sensor so as to maintain a constant gap between a lower surface of the paper money discriminating sensor and the upper surface of the lower body.

    Abstract translation: 结构在可以设置在自动柜员机中的纸币识别装置中保持间隙。 该结构可以包括纸币识别传感器，其设置在上体中，以区分沿输送路径输送的纸币是否为假币，设置为与纸币鉴别传感器相对的下体，其具有 预定的间隙，以及从下体的上表面向上突出并与纸币鉴别传感器的两端部接触的间隔突起，以便在纸币鉴别传感器的下表面和 下身的上表面。

    DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE
    28.
    发明申请
    DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE 有权
    双应力记忆技术方法及相关结构

    公开(公告)号：US20070105299A1

    公开(公告)日：2007-05-10

    申请号：US11164114

    申请日：2005-11-10

    Applicant: Sunfei Fang ,  Jun Kim ,  Zhijiong Luo ,  Hung Ng ,  Nivo Rovedo ,  Young Teh

    Inventor： Sunfei Fang ,  Jun Kim ,  Zhijiong Luo ,  Hung Ng ,  Nivo Rovedo ,  Young Teh

    IPC: H01L21/8238

    CPC classification number: H01L21/823864 ,  H01L21/823807

    Abstract: A method for providing a dual stress memory technique in a semiconductor device including an nFET and a PFET and a related structure are disclosed. One embodiment of the method includes forming a tensile stress layer over the nFET and a compressive stress layer over the pFET, annealing to memorize stress in the semiconductor device and removing the stress layers. The compressive stress layer may include a high stress silicon nitride deposited using a high density plasma (HDP) deposition method. The annealing step may include using a temperature of approximately 400-1200° C. The high stress compressive silicon nitride and/or the anneal temperatures ensure that the compressive stress memorization is retained in the pFET.

    Abstract translation: 公开了一种在包括nFET和PFET以及相关结构的半导体器件中提供双重应力记忆技术的方法。 该方法的一个实施例包括在nFET上形成拉伸应力层，并在pFET上形成压应力层，退火以在半导体器件中记忆应力并去除应力层。 压应力层可以包括使用高密度等离子体（HDP）沉积方法沉积的高应力氮化硅。 退火步骤可以包括使用约400-1200℃的温度。高应力压缩氮化硅和/或退火温度确保压应力记忆保留在pFET中。

    Bar type portable wireless terminal
    29.
    发明授权
    Bar type portable wireless terminal 失效
    酒吧型便携式无线终端

    公开(公告)号：US07203529B2

    公开(公告)日：2007-04-10

    申请号：US10795375

    申请日：2004-03-08

    Applicant: Sung-Kwon Kim ,  Chang-Soo Lee ,  Seung-Min Park ,  Jun-Sang Park ,  Jun Kim

    Inventor： Sung-Kwon Kim ,  Chang-Soo Lee ,  Seung-Min Park ,  Jun-Sang Park ,  Jun Kim

    IPC: H04M1/00 ,  H04M9/00

    CPC classification number: H04N1/2112 ,  H04N7/142 ,  H04N2007/145

    Abstract: A bar type portable wireless terminal includes a lower body installed at its one side surface with a camera lens unit, and at the other surface an image reproduction device is adapted to output images captured by the camera lens unit, and an upper body coupled to an upper end of the lower body so that it is rotatable in a twisting direction relative to a rotation axis extending in a longitudinal direction of the lower body, the upper body being installed at its front surface with a display device adapted to enable the output of the images captured by the camera lens unit. The portable wireless terminal can be used as a digital image device and functions as portable phone, PDA and so on.

    Abstract translation: 条形便携式无线终端包括在其一个侧表面上安装有相机镜头单元的下主体，并且在另一表面上，图像再现装置适于输出由相机镜头单元捕获的图像，以及耦合到 下体的上端部能够相对于沿着下体的长度方向延伸的旋转轴线在扭转方向上旋转，上身体的前表面设置有能够输出 由相机镜头单元拍摄的图像。 便携式无线终端可以用作数字图像设备，并且用作便携式电话，PDA等。

    Method for forming metal wiring in semiconductor device
    30.
    发明申请
    Method for forming metal wiring in semiconductor device 失效
    在半导体器件中形成金属布线的方法

    公开(公告)号：US20060115977A1

    公开(公告)日：2006-06-01

    申请号：US11134640

    申请日：2005-05-20

    Applicant: Soo Kim ,  Jun Kim

    Inventor： Soo Kim ,  Jun Kim

    IPC: H01L21/4763

    CPC classification number: H01L21/76877 ,  H01L21/28556 ,  H01L21/28562

    Abstract: Disclosed is a method for forming a metal wiring in a semiconductor device in order to improve the operational speed of the semiconductor device. The method includes the steps of depositing an interlayer dielectric film on a silicon substrate, in which the interlayer dielectric film has a contact hole for exposing a predetermined portion of the silicon substrate, depositing a barrier layer on the interlayer dielectric film having the contact hole, depositing a first tungsten layer on the barrier layer by using SiH4 as a reaction gas, depositing a second tungsten layer on the first tungsten layer by using B2H6 as a reaction gas, depositing a third tungsten layer on the second tungsten layer in such a manner that the contact hole is filled with the third tungsten layer, and selectively etching the third tungsten layer, the second tungsten layer, the first tungsten layer, and the barrier layer, thereby forming the metal wiring.

    Abstract translation: 公开了一种用于在半导体器件中形成金属布线以提高半导体器件的操作速度的方法。 该方法包括以下步骤：在硅衬底上沉积层间电介质膜，其中层间电介质膜具有用于暴露硅衬底的预定部分的接触孔，在具有接触孔的层间电介质膜上沉积阻挡层， 通过使用SiH 4 S作为反应气体在阻挡层上沉积第一钨层，通过使用B 2 H 2 H 2在第一钨层上沉积第二钨层， 作为反应气体，以这样的方式在第二钨层上沉积第三钨层，使得接触孔填充有第三钨层，并且选择性地蚀刻第三钨层，第二钨层， 第一钨层和阻挡层，从而形成金属布线。

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