公开(公告)号：US20210066468A1

公开(公告)日：2021-03-04

申请号：US17003181

申请日：2020-08-26

Applicant: KIOXIA CORPORATION

Inventor： Takayuki BEPPU ,  Masayuki KITAMURA ,  Hiroshi TOYODA ,  Katsuaki NATORI

IPC: H01L29/423 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/28

Abstract: According to at least one embodiment, a semiconductor device includes a plurality of insulating films adjacent to each other. A conductive film is provided between the plurality of insulating films. The conductive film includes molybdenum having a grain diameter substantially the same as a distance from an upper surface to a lower surface of the conductive film.