SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220122957A1

    公开(公告)日:2022-04-21

    申请号:US17562549

    申请日:2021-12-27

    Inventor: Masayuki MIURA

    Abstract: In a semiconductor device, a substrate has a main surface. A first semiconductor chip has a first front surface and a first back surface, and is mounted on the main surface via a plurality of bump electrodes. A first spacer has a second front surface and a second back surface that is mounted on the main surface. A height of the second front surface from the main surface is within a range between a highest height and a lowest height of the first back surface from the main surface. A second spacer has a third front surface and a third back surface that is mounted on the main surface. A height of the third front surface from the main surface is within the range between the highest height and the lowest height of the first back surface from the main surface.

    MEMORY SYSTEM
    22.
    发明申请

    公开(公告)号:US20220011963A1

    公开(公告)日:2022-01-13

    申请号:US17197667

    申请日:2021-03-10

    Abstract: A memory system has a memory, a first substrate on which the memory is mounted and which is set to a temperature of −40[° C.] or lower, a controller configured to control the memory; and a second substrate on which the controller is mounted, which is set to a temperature of −40[° C.] or higher, and which transmits and receives a signal to and from the first substrate via a signal transmission cable.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210082895A1

    公开(公告)日:2021-03-18

    申请号:US16782710

    申请日:2020-02-05

    Inventor: Masayuki MIURA

    Abstract: In a semiconductor device, a substrate has a main surface. A first semiconductor chip has a first front surface and a first back surface, and is mounted on the main surface via a plurality of bump electrodes. A first spacer has a second front surface and a second back surface that is mounted on the main surface. A height of the second front surface from the main surface is within a range between a highest height and a lowest height of the first back surface from the main surface. A second spacer has a third front surface and a third back surface that is mounted on the main surface. A height of the third front surface from the main surface is within the range between the highest height and the lowest height of the first back surface from the main surface.

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