公开(公告)号：US20060265739A1

公开(公告)日：2006-11-23

申请号：US10908626

申请日：2005-05-19

申请人： Kumar Bhaskaran ,  Tian Chao ,  Rainer Kerth ,  Frederick Wu

发明人： Kumar Bhaskaran ,  Tian Chao ,  Rainer Kerth ,  Frederick Wu

IPC分类号： G06F15/16

CPC分类号： H04L41/0886 ,  H04L41/0803 ,  H04L41/0843 ,  H04L41/22 ,  H04L63/20

摘要： A method, system and computer program product for autonomic security configuration may include controlling a security configuration of at least one resource forming a solution based on a plurality of security requirements. The method may further include applying the plurality of security requirements across a plurality of resources independent of a resource type.

摘要翻译： 用于自主安全配置的方法，系统和计算机程序产品可以包括基于多个安全需求来控制形成解决方案的至少一个资源的安全配置。 该方法还可以包括跨多个资源独立于资源类型应用多个安全性要求。

公开(公告)号：US06482746B2

公开(公告)日：2002-11-19

申请号：US09874882

申请日：2001-06-05

申请人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

发明人： Anand Vasudev ,  Toshio Itoh ,  Ramamujapuram A. Srinivas ,  Frederick Wu ,  Li Wu ,  Brian Boyle ,  Mei Chang

IPC分类号： H01L21302

CPC分类号： H01L21/67028 ,  Y10S438/905 ,  Y10S438/906

摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.

摘要翻译： 一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空 在引入下一个晶圆之前。 晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。 在一个优选实施例中，在使用该室以沉积这种材料之前，将薄的钛保护膜沉积在室的内侧。 在每次两级清洁之后补充保护层。