公开(公告)号：US20110034729A1

公开(公告)日：2011-02-10

申请号：US12988665

申请日：2009-04-21

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： C07C231/10 ,  C07C237/20

CPC分类号： C08G65/007 ,  C08G65/33313 ,  C08G65/33317

摘要： A fluorine-containing polyether compound having the following general formula: (where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group; X is a bromine atom or an iodine atom; l and m each are independently an integer of 10 or more; and l+m is 30-200) can be produced by reaction of a fluorine-containing dicarboxylic acid fluoride compound having the following general formula: (where l and m each are independently an integer of 10 or more, and l+m is 30-200) with an aromatic amine compound having the following general formula: [where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group, R2 is a hydrogen atom or a group represented by the general formula —SiR3R4R5 (where R3, R4 and R5 each are independently an alkyl group having 1 to 10 carbon atoms or a phenyl group); and X is a bromine atom or an iodine atom] preferably in the presence of pyridine or a tertiary amine compound such as triethylamine, etc.

摘要翻译： 具有以下通式的含氟聚醚化合物：其中R1是氢原子，具有1至3个碳原子的烷基或苯基; X是溴原子或碘原子; l和m各自是 独立地为10以上的整数，l + m为30〜200）可以通过具有以下通式的含氟二羧酸氟化物反应来制备：（其中l和m各自独立地为10的整数或 更多和l + m为30-200）与芳族胺化合物具有以下通式：其中R 1是氢原子，具有1至3个碳原子的烷基或苯基，R 2是氢原子 或由通式-SiR 3 R 4 R 5（其中R 3，R 4和R 5各自独立地为具有1〜10个碳原子的烷基或苯基）表示的基团; 和X是溴原子或碘原子]，优选在吡啶或叔胺化合物如三乙胺等的存在下。

公开(公告)号：US07625783B2

公开(公告)日：2009-12-01

申请号：US11601193

申请日：2006-11-17

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： H01L21/00

CPC分类号： H01L21/32105 ,  H01J37/32192 ,  H01L21/3211 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603

摘要： A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is provided. The method includes a first step of forming a base film over a glass substrate; a second step of forming a semiconductor film over the base film; a third step of forming, over the semiconductor film, a film preventing oxidation or nitridation of the semiconductor film into a predetermined pattern; and a fourth step of performing element isolation by radical oxidation or radical nitridation of a region of the semiconductor film, which is not covered with the predetermined pattern, at a temperature of the glass substrate lower than a strain point thereof by 100° C. or more, where radical oxidation or radical nitridation is performed over a semiconductor film placed apart from a plasma generation region, in a plasma treatment chamber with an electron temperature within the range of 0.5 to 1.5 eV, preferably less than or equal to 1.0 eV, and an electron density within the range of 1×1011cm−3 to 1×1013cm−3.

摘要翻译： 提供了可以抑制漏电流的产生的方法，并且通过在可以使用玻璃基板的温度下进行元件隔离来形成微细元素。 该方法包括在玻璃基板上形成基膜的第一步骤; 在基膜上形成半导体膜的第二步骤; 在半导体膜上形成防止半导体膜氧化或氮化成预定图案的膜的第三步骤; 以及第四步骤，在比其应变点低100℃的玻璃基板的温度下，通过自由基氧化或自由基氮化未被该预定图案覆盖的半导体膜的区域进行元件隔离，或 在电离温度为0.5〜1.5eV，优选为1.0eV以下的等离子体处理室中，对离开等离子体产生区域的半导体膜进行自由基氧化或自由基氮化处理，以及 电子密度在1×10 11 cm -3至1×10 13 cm -3的范围内。

公开(公告)号：US20070117406A1

公开(公告)日：2007-05-24

申请号：US11601193

申请日：2006-11-17

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： H01L21/31

CPC分类号： H01L21/32105 ,  H01J37/32192 ,  H01L21/3211 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603

摘要： A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is provided. The method includes a first step of forming a base film over a glass substrate; a second step of forming a semiconductor film over the base film; a third step of forming, over the semiconductor film, a film preventing oxidation or nitridation of the semiconductor film into a predetermined pattern; and a fourth step of performing element isolation by radical oxidation or radical nitridation of a region of the semiconductor film, which is not covered with the predetermined pattern, at a temperature of the glass substrate lower than a strain point thereof by 100° C. or more, where radical oxidation or radical nitridation is performed over a semiconductor film placed apart from a plasma generation region, in a plasma treatment chamber with an electron temperature within the range of 0.5 to 1.5 eV, preferably less than or equal to 1.0 eV, and an electron density within the range of 1×1011cm−3 to 1×1013cm−3.

摘要翻译： 提供了可以抑制漏电流的产生的方法，并且通过在可以使用玻璃基板的温度下进行元件隔离来形成微细元素。 该方法包括在玻璃基板上形成基膜的第一步骤; 在基膜上形成半导体膜的第二步骤; 在半导体膜上形成防止半导体膜氧化或氮化成预定图案的膜的第三步骤; 以及第四步骤，在比其应变点低100℃的玻璃基板的温度下，通过自由基氧化或自由基氮化未被该预定图案覆盖的半导体膜的区域进行元件隔离，或 在电离温度为0.5〜1.5eV，优选为1.0eV以下的等离子体处理室中，对离开等离子体产生区域的半导体膜进行自由基氧化或自由基氮化处理，以及 在1×10 11 -3 -3至1×10 3 -3 -3范围内的电子密度。

公开(公告)号：US20050253178A1

公开(公告)日：2005-11-17

申请号：US11110918

申请日：2005-04-21

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with heat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供应贱金属膜的热量，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US06599104B2

公开(公告)日：2003-07-29

申请号：US09961343

申请日：2001-09-25

申请人： Satoru Saito ,  Shinichi Ohtake

发明人： Satoru Saito ,  Shinichi Ohtake

IPC分类号： F04B3905

CPC分类号： F04C29/045 ,  F04C18/0215 ,  F04C23/008

摘要： A motor-driven compressor is formed integrally with a compressor device for compressing refrigerant and a motor for driving the compressor device. The motor-driven compressor includes a drive circuit and a plurality of cooling fins. The drive circuit controls the operation of the motor. The drive circuit is provided on an outer surface of a wall of a refrigerant suction route. The plurality of cooling fins are formed on an inner surface of the wall of the refrigerant suction route. In such motor-driven compressors, the drive circuit may be sufficiently cooled without using cooling devices. As a result, providing cooling devices with the drive circuit in motor-driven compressors is no longer necessary.

公开(公告)号：USD466523S1

公开(公告)日：2002-12-03

申请号：US29154917

申请日：2002-02-04

申请人： Satoru Saito

设计人： Satoru Saito

公开(公告)号：US06407282B1

公开(公告)日：2002-06-18

申请号：US09699656

申请日：2000-10-30

申请人： Hiroaki Murata ,  Sunao Ikeda ,  Satoru Saito

发明人： Hiroaki Murata ,  Sunao Ikeda ,  Satoru Saito

IPC分类号： C07C6966

CPC分类号： C07C51/64 ,  C07C67/14 ,  C07C59/315 ,  C07C69/708

摘要： Monoester monoacid fluoride of dicarboxylic acid is produced by allowing dicaroxylic acid fluoride represented by the following general formula: FOCCF(CF3)OCF2(A)p(CF2)qCOF where A is a bifunctional perfluorinated group having 1 to 10 carbon atoms; p is 0 or 1; and q is 0 or an integer of 1-10, to react with an alcohol having at least 3 carbon atoms, thereby esterifying the terminal CF2COF group. Such selective monoesterification reaction is effective for separation and purification of a dicarboxylic acid difluoride isomer mixture comprising symmetrical dicarboxylic acid difluoride and asymmetrical dicarboxylic acid difluoride.

摘要翻译： 二羧酸的单酯单酸氟化物是通过以下通式表示的二酮酸氟化物制备的：其中A是具有1-10个碳原子的双功能全氟化基团; p为0或1; q为0或1-10的整数，与具有至少3个碳原子的醇反应，从而酯化终端CF 2 COF基团。 这种选择性单酯化反应对于分离和纯化包含对称二羧酸二氟化物和不对称二羧酸二氟化物的二羧酸二氟化物异构体混合物是有效的。

公开(公告)号：US06364644B1

公开(公告)日：2002-04-02

申请号：US09712943

申请日：2000-11-16

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： F01C102

CPC分类号： F04C18/0215 ,  F04C2230/603

摘要： A scroll-type compressor includes a fixed scroll and an orbiting scroll each having an end plate and a spiral element. Each of the spiral elements interfits and form at least one pair of sealed-off fluid pockets. The fixed scroll is connected to a front housing. A driving mechanism includes a drive shaft rotatably supported by the front housing. A first and a second pin hole for aligning of the fixed scroll and the orbiting scroll are formed in an end surface of the spiral element of the fixed scroll and in an end surface of the front housing, respectively, and the first pin hole formed in the fixed scroll and the second pin hole formed in the front housing have different diameters. The configuration of the scroll-type fluid compressor according to this invention may be finely adjusted to align the fixed scroll and the orbiting scroll.

摘要翻译： 涡旋式压缩机包括固定涡旋件和每个具有端板和螺旋元件的绕动涡旋盘。 每个螺旋元件相互配合并形成至少一对密封的流体袋。 固定涡卷连接到前壳体。 驱动机构包括由前壳体可旋转地支撑的驱动轴。 在固定涡旋件的螺旋形元件的端面和前壳体的端面中分别形成有用于对准固定涡旋件和绕动涡旋件的第一和第二销孔，并且第一销孔形成在 形成在前壳体中的固定涡旋件和第二销孔具有不同的直径。 根据本发明的涡旋式流体压缩机的构造可以被精细地调节以使固定涡旋件和绕动涡盘对准。

公开(公告)号：US5831127A

公开(公告)日：1998-11-03

申请号：US547030

申请日：1995-10-23

申请人： Satoru Saito ,  Haruyoshi Tatsu ,  Lev Solomonovich German, deceased ,  Valerii Romanovich Polishchuk, deceased

发明人： Satoru Saito ,  Haruyoshi Tatsu ,  Lev Solomonovich German, deceased ,  Valerii Romanovich Polishchuk, deceased

IPC分类号： C07C323/34 ,  C07D277/82 ,  C07D285/00 ,  C07D285/01 ,  C08K5/37 ,  C08K5/375 ,  C07C323/35

CPC分类号： C07D285/01 ,  C07C323/34 ,  C07D277/82 ,  C08K5/375

摘要： A novel bisaminothiophenol compound represented by the following general formula: ##STR1## where Rf is a perfluoroalkylidene group having 1 to 10 carbon atoms, is used as a cross-linking agent for fluorine-containing elastomers having CN groups as cross-linkable groups.

摘要翻译： 作为具有CN基团的含氟弹性体的交联剂作为交联性基团，使用由以下通式表示的新型双氨基苯硫酚化合物：其中Rf为碳原子数为1〜10的全氟亚烷基的。

公开(公告)号：US5637648A

公开(公告)日：1997-06-10

申请号：US678092

申请日：1996-07-11

申请人： Satoru Saito ,  Haruyoshi Tatsu ,  Sergei V. Sokolov ,  Alexandre N. Kollar ,  Sergei R. Sterlin ,  Yurii V. Zeifman ,  Sergei A. Postovoi

发明人： Satoru Saito ,  Haruyoshi Tatsu ,  Sergei V. Sokolov ,  Alexandre N. Kollar ,  Sergei R. Sterlin ,  Yurii V. Zeifman ,  Sergei A. Postovoi

IPC分类号： C08K5/24 ,  C08K5/17 ,  C08K5/29 ,  C08L27/12 ,  C08L5/29 ,  C08L27/18

CPC分类号： C08K5/29

摘要： A fluorine-containing elastomer composition comprising a fluorine-containing elastomer having a cyano group as a cross-linkable group and a bisamidrazone compound represented by the following general formula as a vulcanizing agent: ##STR1## wherein Rf is one of the following groups:(CF.sub.2).sub.n, CFX(OCF.sub.2 CFX).sub.m O(CF.sub.2).sub.nandCFX(OCF.sub.2 CFX).sub.p O(CF.sub.2).sub.n O(CFXCF.sub.2 O).sub.q CFXhas considerably improved roll kneadability and processability during the vulcanization-molding, and gives vulcanization products having good heat resistance and solvent resistance.

摘要翻译： 包含具有氰基作为可交联基团的含氟弹性体和由以下通式表示的硫化腙化合物作为硫化剂的含氟弹性体组合物：其中Rf为下列基团之一：（ CF2）n，CFX（OCF2CFX）mO（CF2）n和CFX（OCF2CFX）pO（CF2）nO（CFXCF2O）qCFX在硫化成型过程中具有显着提高的辊捏合性和加工性，并得到具有良好耐热性和溶剂性的硫化产品 抵抗性。