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    Solid state image pick-up device with a shutter function
    21.
    发明授权
    Solid state image pick-up device with a shutter function 失效
    具有快门功能的固态摄像装置

    公开(公告)号：US4717945A

    公开(公告)日：1988-01-05

    申请号：US879507

    申请日：1986-06-27

    申请人： Atsushi Yusa ,  Toshimasa Akagi ,  Tomoji Ishii ,  Yoshinori Ohta

    发明人： Atsushi Yusa ,  Toshimasa Akagi ,  Tomoji Ishii ,  Yoshinori Ohta

    IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/355 ,  H04N5/369 ,  H04N5/372 ,  H01L29/78 ,  H01L27/14

    CPC分类号： H01L27/14887 ,  H01L27/14831

    摘要： A solid state image pick-up device with a shutter function including a number of charge coupled devices of vertical overflow domain type is disclosed. A light receiving portion comprises a p.sup.- epitaxial layer arranged on a main surface of an n.sup.+ substrate and an n.sup.+ diffusion surface region is provided in a surface of the p.sup.- layer. A p.sup.+ control gate for controlling a potential barrier between the n.sup.+ diffusion surface region and the p.sup.- epitaxial layer is formed in the epitaxial layer adjacent to the light receiving portion, and a p well region is formed in the epitaxial layer adjacent to the light receiving portion. During a shutter close period, i.e. before a signal charge storing operation, a control voltage applied to the control gate and a reverse bias voltage applied across the n.sup.+ substrate and p.sup.- epitaxial layer are so adjusted that a potential barrier between the epitaxial layer and surface region is made sufficiently small to completely discharge all the charge stored in the light receiving portion into the substrate serving as the overflow drain.

    摘要翻译： 公开了具有垂直溢出域类型的多个电荷耦合器件的具有快门功能的固态摄像装置。 光接收部分包括布置在n +衬底的主表面上的p-外延层，并且在p层的表面中设置n +扩散表面区域。 在与光接收部分相邻的外延层中形成用于控制n +扩散表面区域和p-外延层之间的势垒的p +控制栅极，并且在靠近光接收部分的外延层中形成p阱区域 。 在快门关闭期间，即在信号电荷存储操作之前，施加到控制栅极的控制电压和施加在n +衬底和p-外延层上的反向偏置电压被调整为使得外延层和表面之间的势垒 区域被制成足够小以将存储在光接收部分中的所有电荷完全放电到用作溢流漏极的衬底中。