公开(公告)号：US08298732B2

公开(公告)日：2012-10-30

申请号：US13017615

申请日：2011-01-31

申请人： Masahiko Minemura ,  Seiji Makino ,  Kanji Takeuchi ,  Noboru Sugiyama ,  Kozo Ogino

发明人： Masahiko Minemura ,  Seiji Makino ,  Kanji Takeuchi ,  Noboru Sugiyama ,  Kozo Ogino

IPC分类号： G03C5/00

CPC分类号： G03F7/7045 ,  G03F7/705 ,  H01J2237/31757 ,  H01J2237/31761

摘要： An exposure method includes generating a reticle exposure pattern based on a target pattern, performing a lithography simulation based on the reticle exposure pattern to generate a simulation pattern that simulates a resist pattern formed by reticle exposure, generating differential data between the target pattern and the simulation pattern, generating a first electron-beam exposure pattern based on the differential data, generating a reticle based on the reticle exposure pattern, performing an optical exposure process with respect to a resist by use of the reticle, and performing an electron-beam exposure process with respect to the resist based on the first electron-beam exposure pattern.

摘要翻译： 曝光方法包括基于目标图案生成掩模版曝光图案，基于掩模版曝光图案执行光刻模拟，以产生模拟通过掩模版曝光形成的抗蚀剂图案的模拟图案，产生目标图案与模拟之间的差分数据 基于差分数据产生第一电子束曝光图案，基于掩模版曝光图案生成掩模版，通过使用掩模版执行关于抗蚀剂的光学曝光处理，并且执行电子束曝光处理 相对于基于第一电子束曝光图案的抗蚀剂。

公开(公告)号：US07977018B2

公开(公告)日：2011-07-12

申请号：US12332456

申请日：2008-12-11

申请人： Kozo Ogino ,  Yasuhide Machida

发明人： Kozo Ogino ,  Yasuhide Machida

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  Y10S430/143

摘要： In the exposure data preparation method for charged particle beam exposure in which an exposure object is exposed while dose is adjusted for each pattern, the method including the steps of: classifying a pattern in terms of a target linewidth; setting a standard characteristic showing the relationship between a standard dose and a resultant linewidth of a resist pattern for a group of patterns having the target linewidth; and preparing exposure data by correcting a shape and dose so that a characteristic showing the relationship between dose of each pattern having the target linewidth and a resultant linewidth of a resist pattern follows the standard characteristic.

摘要翻译： 在曝光数据的曝光数据准备方法中，曝光对象物在曝光的同时对每个图案进行调整，曝光数据准备方法包括以下步骤：根据目标线宽对图案进行分类; 设定表示具有目标线宽的一组图案的抗蚀剂图案的标准剂量与所得到的线宽之间的关系的标准特性; 并且通过校正形状和剂量来准备曝光数据，使得示出具有目标线宽的每个图案的剂量与抗蚀剂图案的所得线宽之间的关系的特性遵循标准特性。

公开(公告)号：US20070196768A1

公开(公告)日：2007-08-23

申请号：US11452239

申请日：2006-06-14

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G03F7/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  H01J37/3174

摘要： A deposition energy distribution when a charged particle beam is made incident upon a resist film, is approximated by a sum of element distributions having Gaussian distributions. A pattern area density map partitioning the pattern layout plane into small regions, is defined for each element distribution. First and second sub-steps are repeated for each of the pattern area density maps. In the first sub-step, an area density of each small region is obtained. In the second sub-step, in accordance with an energy deposition rate, an exposure dose assigned to a pattern in a first small region, an area of the pattern and the area density of the first small region, the deposition energy to be given to the target small region is obtained and the corrected area density is calculated. A deposition energy at an evaluation point on a pattern layout plane is calculated from the corrected area densities.

摘要翻译： 当带电粒子束入射到抗蚀剂膜上时的沉积能量分布由具有高斯分布的元素分布的总和近似。 为每个元素分布定义将图案布局平面分割成小区域的图案区域密度图。 对于每个图案区域密度图重复第一和第二子步骤。 在第一子步骤中，获得每个小区域的面积密度。 在第二子步骤中，根据能量沉积速率，分配给第一小区域中的图案，图案区域和第一小区域的面积密度的曝光剂量，给予的沉积能量 获得目标小区域并计算校正面积密度。 从校正面积密度计算图案布局平面上的评价点的沉积能量。

公开(公告)号：US20070192758A1

公开(公告)日：2007-08-16

申请号：US11510556

申请日：2006-08-28

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G06F17/50

CPC分类号： H01L21/0277 ,  G03F1/36

摘要： Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.

摘要翻译： 曝光验证适用于指示要由带电粒子束曝光的图案的曝光数据。 如果通过曝光验证从曝光数据中提取错误点，则考虑到其值被修改的系数，修改系数值并再现曝光数据。 因此，通过将系数值中的每一个改变在其适当范围内来重新产生曝光数据。

公开(公告)号：US07240307B2

公开(公告)日：2007-07-03

申请号：US11041216

申请日：2005-01-25

申请人： Hajime Aoyama ,  Morimi Osawa ,  Teruyoshi Yao ,  Kozo Ogino

发明人： Hajime Aoyama ,  Morimi Osawa ,  Teruyoshi Yao ,  Kozo Ogino

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/44

摘要： A pattern size correcting device includes: a testing photomask (1) having a test pattern; a quantifying unit (2) that quantifies, using the testing photomask (1), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit (3) that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit (4) that inputs the open area ratio calculated by the open area ratio calculating unit (3) into a result of the quantification that uses the photomask (1), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect. This correcting device enables quantitative estimation of size variation occurring in a pattern exposed in lithography and easy and accurate correction of pattern size based on the estimation.

摘要翻译： 图案尺寸校正装置包括：测试光掩模（1），具有测试图案; 量化单元（2），其使用测试光掩模（1）量化测试图案中的尺寸变化作为距离和相对于开放面积比率的函数; 开区面积比计算单元，其将具有多个实际装置图案的曝光区域划分为多个校正区域，并计算各个校正区域的开放面积比; 将由开放面积比计算单元（3）计算的开放面积比率输入到使用光掩模（1）的量化结果的数据校正单元（4）计算各个校正中的实际装置图案的尺寸变化 区域，并基于计算校正实际设备模式的设计数据; 以及校正邻近效应的邻近效应校正单元。 该校正装置能够定量估计在光刻中暴露的图案中发生的尺寸变化，并且基于估计容易且准确地校正图案尺寸。

公开(公告)号：US20070021938A1

公开(公告)日：2007-01-25

申请号：US11261790

申请日：2005-10-31

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G01R27/28 ,  G01R31/00

CPC分类号： G01R31/305 ,  Y10S430/143

摘要： A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.

摘要翻译： 一种参数提取方法，能够准确有效地提取用于带电粒子束曝光的参数。 该方法包括以下步骤：在已知参数层上形成未知参数层，在未知参数层上形成抗蚀剂，通过在现有范围内改变的图案对抗蚀剂进行曝光，以及使用曝光提取未知参数层的参数 结果。 在参数提取方法中，已知低于未知参数层的层的参数。 因此，要考虑的层组合和实验数据的数量可以大大降低。 在参数提取未知参数层后，在层上新建一个未知参数层。 然后，以相同的方式提取其参数。 因此，从下层顺序提取参数，因此可以准确有效地提取具有各种层组合的多层结构中的参数。

公开(公告)号：US20050040344A1

公开(公告)日：2005-02-24

申请号：US10853760

申请日：2004-05-26

申请人： Morimi Osawa ,  Kozo Ogino

发明人： Morimi Osawa ,  Kozo Ogino

IPC分类号： H01J37/28 ,  G03F7/20 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  A61N5/00 ,  G03C5/00 ,  G21G5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  Y10S430/143

摘要： A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

摘要翻译： 当将带电粒子束照射到形成在多层的抗蚀剂层上时，产生反向散射强度的方法，其中带电粒子背向散射到抗蚀剂层，每个层包含一种物质或多种物质的图案。 对于多层中的抗蚀剂层的第n层，对于n层中的每个物质，提供反射系数rn，该反射系数rn对应于由n < th>层; 传输系数tn，其对应于由第n层发射的粒子数; 以及带电粒子在第n层内散射的散射分布。 生成方法包括通过使用反射系数rn，透射系数tn和散射分布来产生后向散射强度的第一步骤。