公开(公告)号：US07205078B2

公开(公告)日：2007-04-17

申请号：US10853760

申请日：2004-05-26

申请人： Morimi Osawa ,  Kozo Ogino

发明人： Morimi Osawa ,  Kozo Ogino

IPC分类号： G03F9/00 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  Y10S430/143

摘要： A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

摘要翻译： 当将带电粒子束照射到形成在多层的抗蚀剂层上时，产生反向散射强度的方法，其中带电粒子背面散射到抗蚀剂层，每个层包含一种物质或多种物质的图案。 对于多层中的抗蚀剂层的第n层，对于第n层的每个物质，设置反射系数rn，其对应于 具有由第n层反射的粒子数; 传输系数tn，其对应于由第n层发送的粒子数; 以及散射分布，其中带电粒子在第n层中散射。 生成方法包括通过使用反射系数rn，透射系数tn和散射分布来产生后向散射强度的第一步骤。

公开(公告)号：US06544700B2

公开(公告)日：2003-04-08

申请号：US09809113

申请日：2001-03-16

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G03C500

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  Y10S430/143

摘要： The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.

摘要翻译： 本发明是一种带电粒子束曝光方法，其中具有曝光图案数据的曝光数据是从图案数据生成的，并且根据曝光数据曝光材料; 包括以下步骤：（a）相对于图案产生多个校正区域; （b）将所述图案数据的长而窄的图案划分成多个图案; （c）确定校正区域内的图案区域密度，并根据周围图案修正校正区域的图案密度; （d）根据最高校正图案密度确定每个分割图案的主要曝光量; （e）在主要暴露量的情况下，在分割图案内的校正区域中产生补充曝光图案，其中暴露能量不足。 为每个划分的图案确定最佳的主要曝光量以减少补充曝光图案的数量。

公开(公告)号：US08158312B2

公开(公告)日：2012-04-17

申请号：US12846243

申请日：2010-07-29

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G03C5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S430/143

摘要： A charged particle beam exposure method that includes preparing of exposure data for a plurality of device patterns; obtaining of an integral of forward scattering components in an exposure intensity distribution with each of the device patterns near the center of the exposure intensity distribution as domain of integration; correcting of the shape of each of the plurality of device patterns by correcting the exposure data, so that the integral is equal to a reference value; and appropriating of mask patterns within an exposure mask to each of the device patterns following the correction, such that the center of gravity of each of the device patterns matches the center of gravity of the mask pattern appropriated thereto.

摘要翻译： 一种带电粒子束曝光方法，包括准备多个装置图案的曝光数据; 以暴露强度分布的中心附近的每个设备图案作为积分域获得曝光强度分布中的前向散射分量的积分; 通过校正曝光数据来校正多个设备图案中的每一个的形状，使得积分等于参考值; 并且将曝光掩模内的掩模图案分配给校正后的每个设备图案，使得每个设备图案的重心与适合于其的掩模图案的重心匹配。

公开(公告)号：US08048600B2

公开(公告)日：2011-11-01

申请号：US11261790

申请日：2005-10-31

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G03F9/00

CPC分类号： G01R31/305 ,  Y10S430/143

摘要： A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner. Thus, the parameter is extracted sequentially from lower layers and therefore, the parameter in the multitiered structure having various layer combinations can be accurately and effectively extracted.

摘要翻译： 一种参数提取方法，能够准确有效地提取用于带电粒子束曝光的参数。 该方法包括以下步骤：在已知参数层上形成未知参数层，在未知参数层上形成抗蚀剂，通过在现有范围内改变的图案对抗蚀剂进行曝光，以及使用曝光提取未知参数层的参数 结果。 在参数提取方法中，已知低于未知参数层的层的参数。 因此，要考虑的层组合和实验数据的数量可以大大降低。 在参数提取未知参数层后，在层上新建一个未知参数层。 然后，以相同的方式提取其参数。 因此，从下层顺序提取参数，因此可以准确有效地提取具有各种层组合的多层结构中的参数。

公开(公告)号：US20110033789A1

公开(公告)日：2011-02-10

申请号：US12846243

申请日：2010-07-29

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G03F7/20

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S430/143

摘要： A charged particle beam exposure method that includes preparing of exposure data for a plurality of device patterns; obtaining of an integral of forward scattering components in an exposure intensity distribution with each of the device patterns near the center of the exposure intensity distribution as domain of integration; correcting of the shape of each of the plurality of device patterns by correcting the exposure data, so that the integral is equal to a reference value; and appropriating of mask patterns within an exposure mask to each of the device patterns following the correction, such that the center of gravity of each of the device patterns matches the center of gravity of the mask pattern appropriated thereto.

摘要翻译： 一种带电粒子束曝光方法，包括准备多个装置图案的曝光数据; 以暴露强度分布的中心附近的每个设备图案作为积分域获得曝光强度分布中的前向散射分量的积分; 通过校正曝光数据来校正多个设备图案中的每一个的形状，使得积分等于参考值; 并且将曝光掩模内的掩模图案分配给校正后的每个设备图案，使得每个设备图案的重心与适合于其的掩模图案的重心匹配。

公开(公告)号：US08429573B2

公开(公告)日：2013-04-23

申请号：US12350525

申请日：2009-01-08

申请人： Kozo Ogino ,  Hiromi Hoshino

发明人： Kozo Ogino ,  Hiromi Hoshino

IPC分类号： G06F17/50 ,  G03F1/00 ,  G03F7/20

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026

摘要： A method includes: generating electron beam exposure data, used for electron beam exposure, from design data of a semiconductor device; extracting differential information indicating a difference in shape between an electron beam exposure pattern formed on a substrate through electron beam exposure on the basis of the electron beam exposure data and a photoexposure pattern formed on the substrate through photoexposure on the basis of the design data of the semiconductor device; determining whether the size of the difference in shape between the electron beam exposure pattern and the photoexposure pattern falls within a predetermined reference value; acquiring shape changed exposure data by changing the shape of the pattern of the electron beam exposure data in accordance with the differential information and updating the electron beam exposure data; and repeating the differential extraction, the determination and the updating when the size of the difference falls outside the predetermined reference value.

摘要翻译： 一种方法包括：从半导体器件的设计数据产生用于电子束曝光的电子束曝光数据; 基于电子束曝光数据，通过电子束曝光在基板上形成的电子束曝光图案和通过光曝光形成在基板上的光曝光图案之间的差异信息提取差异信息，基于 半导体器件; 确定电子束曝光图案和光曝光图案之间的形状差异的大小是否在预定的参考值内; 通过根据差分信息改变电子束曝光数据的图案的形状并更新电子束曝光数据来获取形状改变的曝光数据; 并且当差值的大小落在预定参考值之外时重复差分提取，确定和更新。

公开(公告)号：US08141009B2

公开(公告)日：2012-03-20

申请号：US12398664

申请日：2009-03-05

申请人： Masaaki Miyajima ,  Hiromi Hoshino ,  Hiroshi Takita ,  Kozo Ogino

发明人： Masaaki Miyajima ,  Hiromi Hoshino ,  Hiroshi Takita ,  Kozo Ogino

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68

摘要： A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N×N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

摘要翻译： 一种用于制备用于曝光的数据的方法包括：从掩模版准备规则形成第一多个矩形图案; 利用所述第一矩形图案衬里进行掩模版曝光的物体图案，并从所述物体图案中的所述第一多个矩形图案提取以N×N矩阵设置的第二多个矩形图案; 并且基于第二多个矩形图案之间的距离执行违反检测处理和对掩模版曝光图案的图案宽度和图案距离的校正处理。

公开(公告)号：US07707540B2

公开(公告)日：2010-04-27

申请号：US11510556

申请日：2006-08-28

申请人： Kozo Ogino

发明人： Kozo Ogino

IPC分类号： G06F17/50

CPC分类号： H01L21/0277 ,  G03F1/36

摘要： Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.

摘要翻译： 曝光验证适用于指示要由带电粒子束曝光的图案的曝光数据。 如果通过曝光验证从曝光数据中提取错误点，则考虑到其值被修改的系数，修改系数值并再现曝光数据。 因此，通过将系数值中的每一个改变在其适当范围内来重新产生曝光数据。

公开(公告)号：US20090239160A1

公开(公告)日：2009-09-24

申请号：US12398664

申请日：2009-03-05

申请人： Masaaki MIYAJIMA ,  Hiromi Hoshino ,  Hiroshi Takita ,  Kozo Ogino

发明人： Masaaki MIYAJIMA ,  Hiromi Hoshino ,  Hiroshi Takita ,  Kozo Ogino

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/36 ,  G03F1/68

摘要： A method for preparing data for exposure includes forming a first plurality of rectangular patterns from a reticle preparing rule; lining an object pattern for performing reticle exposure with the first rectangular patterns, and extracting a second plurality of rectangular patterns, disposed in an N×N matrix, from the first plurality of rectangular patterns in the object pattern; and performing a violation detecting treatment and a correcting treatment of the pattern width and the pattern distance of the reticle exposure pattern on the basis of the distance between the second plurality of rectangular patterns.

摘要翻译： 准备用于曝光的数据的方法包括从掩模版准备规则形成第一多个矩形图案; 利用所述第一矩形图案衬里进行掩模版曝光的物体图案，并从所述物体图案中的所述第一多个矩形图案提取设置在N×N矩阵中的第二多个矩形图案; 并且基于第二多个矩形图案之间的距离执行违反检测处理和对掩模版曝光图案的图案宽度和图案距离的校正处理。

公开(公告)号：US20090206282A1

公开(公告)日：2009-08-20

申请号：US12364077

申请日：2009-02-02

申请人： Kozo Ogino ,  Takashi Maruyama

发明人： Kozo Ogino ,  Takashi Maruyama

IPC分类号： A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/30

摘要： A method for manufacturing a semiconductor device or a photomask by exposing a pattern while scanning a plurality of deflection regions determined depending on a deflection width of an exposure device on an exposure target with electron beams, enables a computer to execute a step of extracting a first pattern that exists near the boundary of the deflection region and in a first deflection region, a step of searching a second pattern that is adjacent to the first pattern and in a second deflection region different from the first deflection region, and a step of performing data processing of exposure data in accordance with a width of the first pattern so as to minimize the change in distance between the extracted first pattern and the searched second pattern due to positional deviation of the deflection region.

摘要翻译： 一种通过在扫描由电子束在曝光对象上的曝光装置的偏转宽度确定的多个偏转区域的同时曝光图案的方法，使计算机能够执行提取第一 存在于偏转区域的边界附近和第一偏转区域中的图案，搜索与第一图案相邻的第二图案和与第一偏转区域不同的第二偏转区域的步骤，以及执行数据的步骤 根据第一图案的宽度处理曝光数据，以便由于偏转区域的位置偏差而最小化提取的第一图案与搜索到的第二图案之间的距离变化。