公开(公告)号：US20220209019A1

公开(公告)日：2022-06-30

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US20220029029A1

公开(公告)日：2022-01-27

申请号：US17498246

申请日：2021-10-11

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20200212221A1

公开(公告)日：2020-07-02

申请号：US16519577

申请日：2019-07-23

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

公开(公告)号：US20160064421A1

公开(公告)日：2016-03-03

申请号：US14838564

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Kwanghwan JI ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78633 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/5209 ,  H01L51/5225

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

Abstract translation: 公开了一种薄膜晶体管（TFT）基板和使用其的显示装置。 TFT基板包括基底基板，具有多晶半导体并设置在基底基板上的第一TFT以及设置在第一TFT上的具有氧化物半导体的第二TFT。 第二TFT在平面图中与第一TFT的至少一部分重叠。