公开(公告)号：US20170186781A1

公开(公告)日：2017-06-29

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung NOH ,  Jinchae JEON ,  Seungchan CHOI ,  Junho LEE ,  Youngjang LEE ,  Sungbin RYU ,  Kitae KIM ,  Bokyoung CHO ,  Jeanhan YOON ,  Uijin CHUNG ,  Jihye LEE ,  Eunsung KIM ,  Hyunsoo SHIN ,  Kyeongju MOON ,  Hyojin KIM ,  Wonkyung KIM ,  Jeihyun LEE ,  Soyeon JE

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US20160307936A1

公开(公告)日：2016-10-20

申请号：US15133419

申请日：2016-04-20

Applicant: LG Display Co., Ltd.

Inventor： Hyunsoo SHIN ,  Uijin CHUNG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a substrate; a first thin film transistor on the substrate and including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor on the substrate and including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; an intermediate insulating layer on the first gate electrode and the second gate electrode and under the oxide semiconductor layer; and a dummy layer between the first source electrode and the intermediate insulating layer and between the first drain electrode and the intermediate insulating layer, wherein the dummy layer is formed of a same material as the oxide semiconductor layer.

Abstract translation: 薄膜晶体管基板包括基板; 在所述基板上的第一薄膜晶体管，包括多晶半导体层，所述多晶半导体层上的第一栅电极，第一源电极和第一漏电极; 第二薄膜晶体管，其包括第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极; 在所述第一栅极电极和所述第二栅极电极之下和所述氧化物半导体层下方的中间绝缘层; 以及在第一源极和中间绝缘层之间以及第一漏极和中间绝缘层之间的虚设层，其中虚设层由与氧化物半导体层相同的材料形成。

公开(公告)号：US20160064421A1

公开(公告)日：2016-03-03

申请号：US14838564

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Kwanghwan JI ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78633 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/5209 ,  H01L51/5225

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.

Abstract translation: 公开了一种薄膜晶体管（TFT）基板和使用其的显示装置。 TFT基板包括基底基板，具有多晶半导体并设置在基底基板上的第一TFT以及设置在第一TFT上的具有氧化物半导体的第二TFT。 第二TFT在平面图中与第一TFT的至少一部分重叠。

公开(公告)号：US20190123120A1

公开(公告)日：2019-04-25

申请号：US16221203

申请日：2018-12-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US20160063924A1

公开(公告)日：2016-03-03

申请号：US14838659

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: G09G3/32 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G3/3208 ,  G09G2310/0297 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2340/0435 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5225 ,  H01L2227/323

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

Abstract translation: 本公开涉及在相同基板上具有两种不同类型的薄膜晶体管的薄膜晶体管基板和使用其的显示器。 所公开的显示装置可以包括基板，包括在基板上具有多晶半导体材料的第一半导体层的第一薄膜晶体管，以及包括在基板上包括氧化物半导体材料的第二半导体层的第二薄膜晶体管。 第一半导体层和第二半导体层都可以直接设置在相同的下层上。

公开(公告)号：US20180350848A1

公开(公告)日：2018-12-06

申请号：US16047875

申请日：2018-07-27

Applicant: LG Display Co., Ltd.

Inventor： Hyunsoo SHIN ,  Uijin CHUNG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes a substrate; a first thin film transistor on the substrate and including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor on the substrate and including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; an intermediate insulating layer on the first gate electrode and the second gate electrode and under the oxide semiconductor layer; and a dummy layer between the first source electrode and the intermediate insulating layer and between the first drain electrode and the intermediate insulating layer, wherein the dummy layer is formed of a same material as the oxide semiconductor layer.

公开(公告)号：US20170155000A1

公开(公告)日：2017-06-01

申请号：US15352951

申请日：2016-11-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Kyeongju MOON ,  Soyoung NOH ,  Hyunsoo SHIN ,  Wonkyung KIM

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

公开(公告)号：US20170117304A1

公开(公告)日：2017-04-27

申请号：US15295128

申请日：2016-10-17

Applicant: LG Display Co., Ltd.

Inventor： Wonkyung KIM ,  Soyoung NOH ,  Hyunsoo SHIN ,  Kyeongju MOON

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.