公开(公告)号：US20210029839A1

公开(公告)日：2021-01-28

申请号：US16929447

申请日：2020-07-15

Applicant: LG Display Co., Ltd.

Inventor： Hoiyong KWON ,  JiHun SONG

IPC: H05K5/00 ,  H05K5/03 ,  H05K5/02

Abstract: The present invention discloses a display device. The display device includes a display panel in which a plurality of pixels is defined; a back cover which overlaps the display panel; a roller which winds or unwinds the back cover and the display panel and includes a flat portion and a curved portion; and a fixing member which is configured to fix the back cover to the roller and on the flat portion and a part of the curved portion.

公开(公告)号：US20190138058A1

公开(公告)日：2019-05-09

申请号：US16158592

申请日：2018-10-12

Applicant: LG Display Co., Ltd.

Inventor： Hoiyong KWON ,  DongYoon KIM

IPC: G06F1/16 ,  G09G3/22

Abstract: A rollable display apparatus includes a flexible display panel, a panel extension sheet connected to the flexible display panel, and a housing module. The flexible display panel is configured to be loaded into and unloaded from the housing module. The rollable display apparatus further includes a roller part in the housing module that has a double roller structure. The roller part is configured to individually wind and unwind each of the panel extension sheet and the flexible display panel.

公开(公告)号：US20180090617A1

公开(公告)日：2018-03-29

申请号：US15714000

申请日：2017-09-25

Applicant: LG Display Co., Ltd.

Inventor： Sangcheon YOUN ,  Seyeoul KWON ,  Hoiyong KWON ,  Eunah KIM

IPC: H01L29/786 ,  H01L29/417 ,  H01L21/283 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02521 ,  H01L21/02617 ,  H01L21/283 ,  H01L27/1218 ,  H01L29/41733 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78633

Abstract: A flexible display is disclosed. The flexible display including an oxide semiconductor thin film transistor on a plastic substrate includes a first buffer layer disposed on the plastic substrate, a second buffer layer disposed on the first buffer layer and formed of silicon oxide (SiOx), and an active layer disposed on the second buffer layer and formed of an oxide semiconductor. The first buffer layer includes a lower layer directly contacting the plastic substrate and formed of silicon nitride (SiNx) and an upper layer disposed on the lower layer and formed of silicon oxide (SiOx).