公开(公告)号：US20230307548A1

公开(公告)日：2023-09-28

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78696 ,  H01L29/78633 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20210343855A1

公开(公告)日：2021-11-04

申请号：US17378333

申请日：2021-07-16

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  G09G3/3225 ,  H01L27/12 ,  G09G3/3266 ,  G09G3/3233 ,  H01L29/786

Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US20200052085A1

公开(公告)日：2020-02-13

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  H01L27/12 ,  G09G3/3225

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.