公开(公告)号：US20180151827A1

公开(公告)日：2018-05-31

申请号：US15825012

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  DaeHwan KIM

IPC: H01L51/50 ,  H01L51/05 ,  H01L51/52

CPC classification number: H01L51/5096 ,  H01L27/3272 ,  H01L51/0554 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5237 ,  H01L51/5284 ,  H01L51/5296 ,  H01L51/56

Abstract: Disclosed are an organic light emitting display panel and an organic light emitting display device including the same, which include a blocking layer for blocking the inflow of scattered light, transferred from an organic light emitting diode, into a driving transistor. The organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer. An anode configuring the organic light emitting diode is connected to the first conductor part, and the anode protrudes convexly from an upper surface of the passivation layer.

公开(公告)号：US20240224592A1

公开(公告)日：2024-07-04

申请号：US18454273

申请日：2023-08-23

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Jaeman JANG ,  Uyhyun CHOI ,  Min-Gu KANG ,  KyungChul OK ,  SeungChan CHOI

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1201 ,  H10K59/126 ,  G09G2300/0842

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

公开(公告)号：US20230076003A1

公开(公告)日：2023-03-09

申请号：US17902513

申请日：2022-09-02

Applicant: LG Display Co., Ltd.

Inventor： Sunggu KIM ,  DaeHwan KIM

IPC: H01L29/423 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor and a display apparatus including the thin film transistor are discussed. The thin film transistor can include a light shielding layer on at least a portion of a substrate, a buffer layer on the light shielding layer, an active layer on the buffer layer, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. A gate electrode opening can be disposed in the gate electrode and is formed by removing a portion of the gate electrode.

公开(公告)号：US20210193699A1

公开(公告)日：2021-06-24

申请号：US17196805

申请日：2021-03-09

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20190206971A1

公开(公告)日：2019-07-04

申请号：US16216560

申请日：2018-12-11

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Younghyun KO

IPC: H01L27/32 ,  G09G3/3291

Abstract: An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

公开(公告)号：US20210343855A1

公开(公告)日：2021-11-04

申请号：US17378333

申请日：2021-07-16

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  G09G3/3225 ,  H01L27/12 ,  G09G3/3266 ,  G09G3/3233 ,  H01L29/786

Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US20200212077A1

公开(公告)日：2020-07-02

申请号：US16525482

申请日：2019-07-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  SeHee PARK ,  DaeHwan KIM ,  PilSang YUN

IPC: H01L27/12 ,  H01L27/32

Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

公开(公告)号：US20200052085A1

公开(公告)日：2020-02-13

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  H01L27/12 ,  G09G3/3225

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.