公开(公告)号：US20210202755A1

公开(公告)日：2021-07-01

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US20210193804A1

公开(公告)日：2021-06-24

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak CHO ,  Jiyong NOH ,  Jaeman JANG ,  PilSang YUN ,  Jeyong JEON

IPC: H01L29/40 ,  G09G3/32 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/765 ,  H01L29/66

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US20230411409A1

公开(公告)日：2023-12-21

申请号：US17974430

申请日：2022-10-26

Applicant: LG Display Co., Ltd.

Inventor： SungJun YUN ,  PilSang YUN ,  Taegyun KIM ,  MinSu KIM ,  InTak CHO ,  ISak LEE

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/124 ,  H01L27/1259

Abstract: Disclosed are a display device and a manufacturing method thereof. More particularly, a display device including a substrate, a buffer layer disposed on the substrate, an active layer disposed on the buffer layer, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, wherein the gate insulating film includes a first portion and a second portion, wherein the first portion is closer to the active layer than the second portion and the second portion is closer to the gate electrode than the first portion, and the gate insulating film includes two or more elements having different component concentrations in the first portion and the second portion, and a manufacturing method thereof are provided to provide a transistor structure having high reliability.

公开(公告)号：US20210202760A1

公开(公告)日：2021-07-01

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  JungSeok SEO ,  PilSang YUN ,  InTak CHO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US20210202754A1

公开(公告)日：2021-07-01

申请号：US17121248

申请日：2020-12-14

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20230018306A1

公开(公告)日：2023-01-19

申请号：US17958167

申请日：2022-09-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  PilSang YUN ,  Jiyong NOH ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66

Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.

公开(公告)号：US20200212076A1

公开(公告)日：2020-07-02

申请号：US16517263

申请日：2019-07-19

Applicant: LG Display Co., Ltd.

Inventor： Jaeman JANG ,  InTak CHO

IPC: H01L27/12

Abstract: A thin film transistor includes an active layer on a substrate, a gate electrode configured to be spaced from the active layer and partially overlapped with the active layer, and a gate insulating layer, at least a part of the gate insulating layer being disposed between the active layer and the gate electrode, wherein the gate insulating layer includes a first gate insulating layer between the active layer and the gate electrode, and a second gate insulating layer configured to have a dielectric constant (k) which is different from a dielectric constant of the first gate insulating layer, and disposed in a same layer as the first gate insulating layer, and wherein at least a part of the second gate insulating layer is disposed between the active layer and the gate electrode.

公开(公告)号：US20200184903A1

公开(公告)日：2020-06-11

申请号：US16694674

申请日：2019-11-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  PilSang YUN ,  Jeyong JEON ,  Jiyong NOH ,  SeHee PARK

IPC: G09G3/3291 ,  H01L27/32 ,  G09G3/3266

Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first electrode, the first insulating film and the second electrode; and a second active layer of the second transistor, the second active layer being disposed on the third and fourth electrodes and across the open area of the first insulating film.

公开(公告)号：US20200161476A1

公开(公告)日：2020-05-21

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun SUNG ,  SeHee PARK ,  Jiyong NOH ,  InTak CHO ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

公开(公告)号：US20210343855A1

公开(公告)日：2021-11-04

申请号：US17378333

申请日：2021-07-16

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  G09G3/3225 ,  H01L27/12 ,  G09G3/3266 ,  G09G3/3233 ,  H01L29/786

Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.