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    DISPLAY DEVICE COMPRISING THIN FILM TRANSISTORS AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    DISPLAY DEVICE COMPRISING THIN FILM TRANSISTORS AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210305341A1

    公开(公告)日：2021-09-30

    申请号：US17344903

    申请日：2021-06-10

    Applicant: LG Display Co., Ltd.

    Inventor： JungSeok SEO ,  PilSang YUN ,  SeHee PARK ,  Jiyong NOH

    IPC: H01L27/32 ,  H01L27/12

    Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

    Thin Film Transistor and Display Apparatus Comprising the Same
    2.
    发明申请
    Thin Film Transistor and Display Apparatus Comprising the Same 有权

    公开(公告)号：US20210202755A1

    公开(公告)日：2021-07-01

    申请号：US17124344

    申请日：2020-12-16

    Applicant: LG Display Co., Ltd.

    Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

    IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

    Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

    PANEL, TRANSISTOR AND ELECTRONIC DEVICE
    5.
    发明申请
    PANEL, TRANSISTOR AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20200152913A1

    公开(公告)日：2020-05-14

    申请号：US16668262

    申请日：2019-10-30

    Applicant: LG Display Co., Ltd.

    Inventor： Jiyong NOH ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

    IPC: H01L51/52 ,  H01L27/12

    Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ELECTRONIC DEVICE INCLUDING THE SAME
    10.
    发明申请
    THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200184903A1

    公开(公告)日：2020-06-11

    申请号：US16694674

    申请日：2019-11-25

    Applicant: LG DISPLAY CO., LTD.

    Inventor： InTak CHO ,  PilSang YUN ,  Jeyong JEON ,  Jiyong NOH ,  SeHee PARK

    IPC: G09G3/3291 ,  H01L27/32 ,  G09G3/3266

    Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first electrode, the first insulating film and the second electrode; and a second active layer of the second transistor, the second active layer being disposed on the third and fourth electrodes and across the open area of the first insulating film.

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