公开(公告)号：US20170345498A1

公开(公告)日：2017-11-30

申请号：US15676560

申请日：2017-08-14

Applicant: Micron Technology, Inc.

Inventor： DerChang Kau ,  Gianpaolo Spadini

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0097 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.