公开(公告)号：US11652108B2

公开(公告)日：2023-05-16

申请号：US17061852

申请日：2020-10-02

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Yi Fang Lee ,  Kevin J. Torek

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/768

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H01L29/7869 ,  H01L21/76877 ,  H01L27/1255

Abstract: Some embodiments include an integrated assembly which includes a base structure. The base structure includes a series of conductive structures which extend along a first direction. The conductive structures have steps which alternate with recessed regions along the first direction. Pillars of semiconductor material are over the steps. The semiconductor material includes at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Group 16 of the periodic table. The semiconductor material may be semiconductor oxide in some applications. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20160055973A1

公开(公告)日：2016-02-25

申请号：US14931073

申请日：2015-11-03

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kevin J. Torek

IPC: H01G4/06 ,  H01G4/008 ,  H01G4/005

CPC classification number: H01L27/10852 ,  H01G4/005 ,  H01G4/008 ,  H01G4/06 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/60 ,  H01L28/75 ,  H01L28/91

Abstract: A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.

Abstract translation: 形成电容器的方法包括在支撑材料内提供第一电容器电极。 第一电容器电极含有TiN，载体材料含有多晶硅。 使用含硫和含氟蚀刻化学法，相对于含TiN的第一电容器电极，选择性地对含多晶硅的支撑材料进行干式各向异性蚀刻。 在第一电容器电极的侧壁上形成电容器电介质，并且在电容器电介质上形成第二电容器电极。 公开了另外的方法。