公开(公告)号：US20160086953A1

公开(公告)日：2016-03-24

申请号：US14959974

申请日：2015-12-04

Applicant: MACRONIX International Co., Ltd.

Inventor： Kuang-Wen Liu

IPC: H01L27/105 ,  H01L21/283 ,  H01L27/02

CPC classification number: H01L27/1052 ,  H01L21/283 ,  H01L21/31116 ,  H01L21/762 ,  H01L21/768 ,  H01L27/0207 ,  H01L27/11565 ,  H01L27/11582

Abstract: Provided is a method for fabricating a memory device including forming a stack layer on a substrate, and embedding a plurality of gate pillar structures and a plurality of dielectric pillars in the stack layer. The plurality of gate pillar structures and the plurality of dielectric pillars extend along a same direction and are alternately arranged, so that the stack layer is divided into a plurality of stack structures.

Abstract translation: 提供一种用于制造存储器件的方法，该存储器件包括在衬底上形成堆叠层，并且在堆叠层中嵌入多个栅极柱结构和多个电介质柱。 多个门柱结构和多个介电柱沿着相同的方向延伸并且交替地布置，使得堆叠层被分成多个堆叠结构。