公开(公告)号：US5314831A

公开(公告)日：1994-05-24

申请号：US965996

申请日：1992-10-23

申请人： Sadao Hirae ,  Noriyuki Kondo ,  Seiichiro Sato

发明人： Sadao Hirae ,  Noriyuki Kondo ,  Seiichiro Sato

IPC分类号： G01N21/88 ,  G01N21/33 ,  G01N21/84 ,  G01N21/93 ,  G01N21/956 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/66 ,  H01L29/786

CPC分类号： G01N21/8422 ,  G01N21/33 ,  H01L22/12

摘要： Light in an ultraviolet region is applied to a first sample of single-crystalline silicon substrate and a sample of silicon thin film to be evaluated respectively, to obtain wavelength dependency of a ratio (reflection intensity ratio) K(.lambda.) between reflection light intensity values of the samples. A straight line connecting points indicating reflection intensity values at wavelengths 235 nm and 320 nm is obtained to subtract an actual reflection intensity ratio Kr from a virtual reflection intensity ratio Ki provided by the straight line with respect to a wavelength of 270 nm, thereby obtaining an index .DELTA.Ks. In a similar manner, an index .DELTA.Ka is obtained as to a second sample of silicon which is composed of only true amorphous phases. The degree of non-crystallization of the silicon thin film to be obtained is evaluated by comparing the index .DELTA.Ks with the index .DELTA.Ka.

摘要翻译： 将紫外线区域的光分别施加到单晶硅基板的第一样本和硅薄膜样品，以分别评价反射光强度值（反射强度比）K（λ）之间的反射光强度值 的样品。 获得连接指示波长235nm和320nm处的反射强度值的点的直线，从相对于波长270nm的直线提供的虚拟反射强度比Ki减去实际反射强度比Kr，从而获得 指数DELTA Ks。 以类似的方式，获得关于仅由真实无定形相组成的硅的第二样品的折射率DELTA Ka。 通过将指数DELTA Ks与指数DELTA Ka进行比较来评价待获得的硅薄膜的非结晶度。

公开(公告)号：US5239183A

公开(公告)日：1993-08-24

申请号：US869816

申请日：1992-04-16

申请人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Sadao Hirae

发明人： Motohiro Kouno ,  Ikuyoshi Nakatani ,  Takamasa Sakai ,  Sadao Hirae

IPC分类号： G01B11/02 ,  G01B11/14 ,  G01S17/46

CPC分类号： G01S17/46 ,  G01B11/026 ,  G01B11/14

摘要： The invention provides a device which utilizes the tunnel effect occuring upon a condition of geometric total reflection, for measuring a narrow gap and surface unevenness of a specimen with high precision. An optical device 40 includes a semi-conductor laser 42, a photodiode 43, and a waveguide layer 44 is formed on a semi-conductor substrate 41 by epitaxial growth. A reflecting surface 44b of the waveguide layer 44 is parallel to the plane of the semi-conductor substrate. A laser beam emitted from the semi-conductor laser is reflected from the reflecting surface 44b under a condition of total reflection in geometrical optics. When the gap between the reflecting surface and the specimen is less than or equal to about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen. The intensity of the transmitted light, which is calculated corresponding to the intensity of the reflected light, depends on the dimension of the gap. In the practice of the invention, the relationship between the transmittance and the dimension of the gap is previously obtained, and the dimension of the gap is determined corresponding to the transmittance measured. A narrow gap and the surface unevenness are accurately and precisely measured.

摘要翻译： 本发明提供了一种利用在几何全反射条件下发生的隧道效应的装置，用于以高精度测量样品的窄间隙和表面不均匀性。 光学器件40包括半导体激光器42，光电二极管43，并且通过外延生长在半导体衬底41上形成波导层44。 波导层44的反射面44b平行于半导体基板的平面。 从半导体激光器发射的激光束在几何光学中的全反射条件下从反射表面44b反射。 当反射面与试样之间的间隙小于或等于激光束的波长时，激光束的一部分被传送到试样中。 对应于反射光强度计算的透射光的强度取决于间隙的尺寸。 在本发明的实践中，预先获得间隙的透射率和尺寸之间的关系，并且根据测量的透射率确定间隙的尺寸。 准确而精确地测量窄间隙和表面凹凸。