公开(公告)号：US10403349B2

公开(公告)日：2019-09-03

申请号：US16140281

申请日：2018-09-24

Applicant: Micron Technology, Inc.

Inventor： Eric Carman

IPC: G11C11/22

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed.

公开(公告)号：US10083733B2

公开(公告)日：2018-09-25

申请号：US15689211

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Eric Carman

IPC: G11C11/56 ,  G11C11/22

CPC classification number: G11C11/2275 ,  G11C11/221 ,  G11C11/2293

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed.

公开(公告)号：US20170270992A1

公开(公告)日：2017-09-21

申请号：US15071991

申请日：2016-03-16

Applicant: Micron Technology, Inc.

Inventor： Eric Carman

IPC: G11C11/22

CPC classification number: G11C11/2275 ,  G11C11/221 ,  G11C11/2293

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed.