公开(公告)号：US12137553B2

公开(公告)日：2024-11-05

申请号：US17395211

申请日：2021-08-05

Applicant: Micron Technology, Inc.

Inventor： Sidhartha Gupta ,  Naveen Kaushik ,  Pankaj Sharma

IPC: H10B41/27 ,  H01L23/538 ,  H10B43/27

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend through the insulative and conductive tiers. Conductive vias are formed above and individually electrically coupled to individual of the channel-material strings. Insulating material is laterally-between immediately-adjacent of the conductive vias. At least some of the insulating material is vertically removed to form an upwardly-open void-space that is circumferentially about multiple of the conductive vias. Insulative material is formed laterally-between the immediately-adjacent conductive vias to form a covered void-space from the upwardly-open void-space. Digitlines are formed above that are individually electrically coupled to a plurality of individual of the conductive vias there-below. Other embodiments, including structure independent of method, are disclosed.

公开(公告)号：US12119176B2

公开(公告)日：2024-10-15

申请号：US17179890

申请日：2021-02-19

Applicant: Micron Technology, Inc.

Inventor： Pankaj Sharma ,  Sidhartha Gupta

IPC: H01G11/26 ,  H01G11/08 ,  H01G11/36 ,  H01G11/86 ,  H01L25/00 ,  H01L25/16 ,  H01L49/02 ,  H10B99/00 ,  H01G11/52 ,  H01G11/58

CPC classification number: H01G11/26 ,  H01G11/08 ,  H01G11/36 ,  H01G11/86 ,  H01L25/16 ,  H01L25/50 ,  H01L28/75 ,  H01L28/86 ,  H01L28/88 ,  H10B99/00 ,  H01G11/52 ,  H01G11/58

Abstract: Some embodiments include an integrated assembly having a supercapacitor supported by a semiconductor substrate. The supercapacitor includes first and second electrode bases. The first electrode base includes first laterally-projecting regions, and the second electrode base includes second laterally-projecting regions which are interdigitated with the first laterally-projecting regions. A distance between the first and second laterally-projecting regions is less than or equal to about 500 nm. Carbon nanotubes extend upwardly from the first and second electrode bases. The carbon nanotubes are configured as a first membrane structure associated with the first electrode base and as a second membrane structure associated with the second electrode base. Pseudocapacitive material is dispersed throughout the first and second membrane structures. Electrolyte material is within and between the first and second membrane structures. Some embodiments include methods of forming integrated assemblies.