公开(公告)号：US20150194935A1

公开(公告)日：2015-07-09

申请号：US14569928

申请日：2014-12-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryangsu KIM

IPC: H03F1/02 ,  H03F1/32 ,  H03F3/193

CPC classification number: H03F1/0211 ,  H03F1/0261 ,  H03F1/223 ,  H03F1/3205 ,  H03F3/193 ,  H03F3/211 ,  H03F2200/516 ,  H03F2201/3215

Abstract: An amplifier includes a first FET having a first back-gate end, a second FET having a second back-gate end, a third FET having a third back-gate end, a first power supply terminal configured to apply a voltage to the first back-gate end, a second power supply terminal configured to apply a voltage to the second back-gate end, and a third power supply terminal configured to apply a voltage to the third back-gate end. In the stated amplifier, the first through third power supply terminals are configured such that different voltages can be set to the first through third power supply terminals.

Abstract translation: 放大器包括具有第一后栅极端的第一FET，具有第二后栅极端的第二FET，具有第三后栅极端的第三FET，被配置为向第一背面施加电压的第一电源端 门端，被配置为向第二后栅极端施加电压的第二电源端子和被配置为向第三后栅极端施加电压的第三电源端子。 在所述放大器中，第一至第三电源端子被配置为使得可以将第一至第三电源端子设定不同的电压。