POWER AMPLIFIER MODULE
    1.
    发明申请

    公开(公告)号:US20190109565A1

    公开(公告)日:2019-04-11

    申请号:US16154861

    申请日:2018-10-09

    摘要: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

    OUTPUT CIRCUIT
    3.
    发明申请
    OUTPUT CIRCUIT 审中-公开

    公开(公告)号:US20180323761A1

    公开(公告)日:2018-11-08

    申请号:US16033993

    申请日:2018-07-12

    发明人: Yusuke Shimamune

    IPC分类号: H03F3/45 H03F3/19 H03F3/21

    摘要: An output circuit includes a first transistor, a second transistor, an operational amplifier that outputs a control voltage, and a switch circuit that controls voltage output in accordance with a control signal. When the control signal is in a first state, the switch circuit supplies the control voltage to the gate of the first transistor to turn on the first transistor and electrically connects the drain of first transistor to the operational amplifier so that a first output voltage is output from the drain of the first transistor. When the control signal is in a second state, the switch circuit supplies the control voltage to the gate of the second transistor to turn on the second transistor and electrically connects the drain of the second transistor to the operational amplifier so that a second output voltage is output from the drain of the second transistor.

    Power amplifier circuit and operating method thereof

    公开(公告)号:US09966920B2

    公开(公告)日:2018-05-08

    申请号:US15413544

    申请日:2017-01-24

    发明人: Chun-Hsiung Chang

    摘要: A power amplifier circuit includes a power supply module and serially connected multi-stages of amplifier circuit. The multi-stages of amplifier circuit, coupled to the power supply module for amplifying an radio frequency (RF) input signal as an RF output signal, which include a driver stage of circuit and a gain stage of circuit. The driver stage of circuit receives and amplifies the RF input signal. The driver stage of circuit is powered by a first supply voltage received from the power supply module. The gain stage of circuit amplifies the signal received from previous stage of amplifier circuit and outputs the RF output signal. The gain stage of circuit is powered by a second supply voltage received from the power supply module. When the power amplifier circuit is operated in a back-off region, the first supply voltage is lower than the second supply voltage.

    POWER AMPLIFIER
    10.
    发明申请
    POWER AMPLIFIER 审中-公开

    公开(公告)号:US20180041169A1

    公开(公告)日:2018-02-08

    申请号:US15684258

    申请日:2017-08-23

    摘要: A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.