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公开(公告)号：US09935265B2
公开(公告)日：2018-04-03
申请号：US15291117
申请日：2016-10-12
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/14
摘要： A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.
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公开(公告)号：US20170222143A1
公开(公告)日：2017-08-03
申请号：US15156401
申请日：2016-05-17
IPC分类号： H01L45/00
CPC分类号： H01L45/1286 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/128 , H01L45/145 , H01L45/146
摘要： A resistive random access memory is provided to solve the problem of low switching speed of the conventional resistive random access memory. The resistive random access memory may include a thermally conductive layer, a first electrode layer, a heat preserving element, a resistance changing layer and a second electrode layer. The first electrode layer is arranged on the thermally conductive layer. The heat preserving element is arranged on the first electrode layer and forms a through-hole. A part of a surface of the first electrode layer is exposed to the through-hole. The resistance changing layer extends from the part of the surface of the first electrode layer to a surface of the heat preserving element that is located outside the through-hole. The second electrode layer is arranged on the resistance changing layer.
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公开(公告)号：US20170117466A1
公开(公告)日：2017-04-27
申请号：US14957674
申请日：2015-12-03
IPC分类号： H01L45/00
CPC分类号： H01L45/124 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A resistive random access memory overcomes the difficulty in reducing the forming voltage thereof. The resistive random access memory includes a first electrode layer, a separating portion, a lateral wall portion, an oxygen-containing rheostatic layer and a second electrode layer. The separating portion is arranged on the first electrode layer and forms a through-hole. The first electrode layer is exposed via the through-hole. The lateral wall portion is annularly arranged on an inner periphery of the separating portion defining the through-hole. The lateral wall portion is connected to the first electrode layer and includes a first dielectric. The oxygen-containing rheostatic layer covers the first electrode layer, the separating portion and the lateral wall portion. The oxygen-containing rheostatic layer includes a second dielectric smaller than the first dielectric. The second electrode layer is arranged on the oxygen-containing rheostatic layer. In this structure, the difficulty can be effectively overcome.
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公开(公告)号：US20160240777A1
公开(公告)日：2016-08-18
申请号：US14734809
申请日：2015-06-09
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.
摘要翻译： 公开了一种包括第一电极，分离介质，电阻变化层和第二电极的电阻式随机存取存储器。 第一电极具有安装面。 分离介质布置在第一电极上并形成通孔。 第一电极的一部分不被分离介质覆盖。 分离介质具有第一电介质。 电阻变化层沿着第一电极的一部分以及分离介质的内表面和第二面延伸。 电阻变化层具有介电常数大于第一电介质的介电常数2以下的第二电介质。 第二电极布置在电阻变化层上。 在这种布置中，可以解决常规电阻随机存取存储器的不稳定形成电压的问题。
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公开(公告)号：US20160118579A1
公开(公告)日：2016-04-28
申请号：US14563708
申请日：2014-12-08
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L21/02266 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641
摘要： A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
摘要翻译： 电阻随机存取存储器包括两个电极层和安装在两个电极层之间的电阻式开关层。 电阻开关层基本上由具有氧，金属材料和移动离子的绝缘材料组成。 移动离子的极性与氧离子的极性相反。 一种制造电阻式随机存取存储器的方法包括：制备第一金属层，并在第一金属层上溅射电阻式开关层。 通过使用含有可移动离子的等离子体将电离层转移到电阻式开关层中，在电阻式开关层上进行表面处理。 移动离子的极性与氧离子的极性相反。 然后，在电阻式开关层上溅射第二金属层。
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