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公开(公告)号：US20170317281A1
公开(公告)日：2017-11-02
申请号：US15213583
申请日：2016-07-19
IPC分类号： H01L45/00
摘要： A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.
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公开(公告)号：US09711720B2
公开(公告)日：2017-07-18
申请号：US14734809
申请日：2015-06-09
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.
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公开(公告)号：US20190341267A1
公开(公告)日：2019-11-07
申请号：US16511396
申请日：2019-07-15
IPC分类号： H01L21/322 , H01L21/26
摘要： A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.
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4.发明申请公开(公告)号：US20180227997A1
公开(公告)日：2018-08-09
申请号：US15597238
申请日：2017-05-17
发明人： Ting-Chang Chang , Kuan-Chang Chang , Tsung-Ming Tsai , Chih-Cheng Shih , Bo-Wei Chen , Chung-I Yang
IPC分类号： H05B33/08
CPC分类号： H05B33/0854 , H01L33/62
摘要： A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.
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公开(公告)号：US09853214B2
公开(公告)日：2017-12-26
申请号：US15393983
申请日：2016-12-29
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.
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公开(公告)号：US20170025607A1
公开(公告)日：2017-01-26
申请号：US15288418
申请日：2016-10-07
IPC分类号： H01L45/00
CPC分类号： H01L45/1625 , H01L21/02266 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641
摘要： A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
摘要翻译： 一种制造电阻式随机存取存储器的方法包括：制备第一金属层，并在第一金属层上溅射电阻式开关层。 通过使用含有可移动离子的等离子体将电离层转移到电阻式开关层中，在电阻式开关层上进行表面处理。 移动离子的极性与氧离子的极性相反。 然后，在电阻式开关层上溅射第二金属层。
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7.发明申请公开(公告)号：US20170341050A1
公开(公告)日：2017-11-30
申请号：US15291577
申请日：2016-10-12
IPC分类号： B01J19/00 , C07D473/12 , B01J3/00 , H01L45/00
CPC分类号： B01J19/0006 , B01J3/008 , B01J2219/00164 , B01J2219/00186 , B01J2219/00198 , B01J2219/00213 , B01J2219/00231 , B01J2219/0024 , C07D473/12 , H01L45/1641 , Y02P20/544
摘要： The present disclosure provides a reaction method with homogeneous-phase supercritical fluid, including: preparing a supercritical fluid and a solute; supplying the supercritical fluid and the solute into a molecular sieve component to uniformly mix the supercritical fluid and the solute in the molecular sieve component, forming a homogeneous-phase supercritical fluid; and supplying the homogeneous-phase supercritical fluid into a reaction chamber for conducting a reaction. The present disclosure further provides an apparatus for homogeneous-phase supercritical fluid reaction, which can be utilized with the reaction method with homogeneous-phase supercritical fluid
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公开(公告)号：US20170117465A1
公开(公告)日：2017-04-27
申请号：US14957658
申请日：2015-12-03
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/146
摘要： A resistive random access memory does not encounter the undesired effects caused by sneak current which occurs when a conventional resistive random access memory operates in an integrated circuit. The resistive random access memory includes a first electrode layer, a first insulating layer, an oxygen-containing layer, a second insulating layer and a second electrode layer. The first insulating layer is arranged on the first electrode layer. The oxygen-containing layer is arranged on the first insulating layer and includes an oxide doped with a metal element. The metal element does not exceed 10% of the oxygen-containing layer. The second insulating layer is arranged on the oxygen-containing layer, and the second electrode layer is arranged on the second insulating layer. In this arrangement, the undesired effects caused by sneak current can be effectively eliminated.
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9.发明授权公开(公告)号：US09620211B1
公开(公告)日：2017-04-11
申请号：US15203443
申请日：2016-07-06
CPC分类号： G11C13/0097 , G11C13/0033 , G11C13/0035 , G11C2013/0073 , H01L45/08 , H01L45/1233
摘要： A maintaining device and a maintenance method for maintaining the normal operation of a resistive random access memory are disclosed. The maintenance method can be executed by the maintaining device. Said memory includes first and second electrodes. The first electrode is not grounded. The maintaining device is connected to the first electrode so that the first electrode receives an operational signal and a restoring signal generated by the maintaining device. The operational signal transits from a zero voltage to a non-zero voltage and then to the zero voltage. If the operational signal has already transited from the non-zero voltage to the zero voltage, the maintenance method controls the restoring signal to transit from the zero voltage to a negative voltage, controls the restoring signal to remain the negative voltage for a period of restoring time, and controls the restoring signal to transit from the negative voltage to the zero voltage.
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公开(公告)号：US09496493B2
公开(公告)日：2016-11-15
申请号：US14563708
申请日：2014-12-08
CPC分类号： H01L45/1625 , H01L21/02266 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1641
摘要： A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
摘要翻译： 电阻随机存取存储器包括两个电极层和安装在两个电极层之间的电阻式开关层。 电阻开关层基本上由具有氧，金属材料和移动离子的绝缘材料组成。 移动离子的极性与氧离子的极性相反。 一种制造电阻式随机存取存储器的方法包括：制备第一金属层，并在第一金属层上溅射电阻式开关层。 通过使用含有可移动离子的等离子体将电离层转移到电阻式开关层中，在电阻式开关层上进行表面处理。 移动离子的极性与氧离子的极性相反。 然后，在电阻式开关层上溅射第二金属层。
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