WAFER PLACEMENT TABLE
    21.
    发明申请

    公开(公告)号:US20230122013A1

    公开(公告)日:2023-04-20

    申请号:US17813643

    申请日:2022-07-20

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

    WAFER PLACEMENT TABLE
    22.
    发明申请

    公开(公告)号:US20230055928A1

    公开(公告)日:2023-02-23

    申请号:US17813051

    申请日:2022-07-18

    Abstract: A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.

    FOCUS RING PLACEMENT TABLE
    23.
    发明申请

    公开(公告)号:US20220399190A1

    公开(公告)日:2022-12-15

    申请号:US17661293

    申请日:2022-04-29

    Abstract: A focus ring placement table includes an annular ceramic heater on which a focus ring is placed, a metal base, an adhesive element bonding the metal base and the ceramic heater, an inner-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an inner peripheral portion of the adhesive element, and an outer-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an outer peripheral portion of the adhesive element. A coefficient of thermal expansion of the adhesive element is equal to or smaller than a coefficient of thermal expansion of the inner-peripheral-side protective element and is equal to or greater than a coefficient of thermal expansion of the outer-peripheral-side protective element.

    WAFER PLACEMENT TABLE
    24.
    发明申请

    公开(公告)号:US20220124875A1

    公开(公告)日:2022-04-21

    申请号:US17305170

    申请日:2021-07-01

    Abstract: A wafer placement table includes a ceramic plate, an electrode embedded in the ceramic plate, a hollow ceramic shaft attached to a surface of the ceramic plate, a power-supplying member running inside the ceramic shaft and connected to a terminal of the electrode, a plate-side attaching site defined on the ceramic plate and to which the power-supplying member is attached, and a power-source-side attaching site defined at a free end of the ceramic shaft and to which the power-supplying member is attached. The power-source-side attaching site is defined in correspondence with the plate-side attaching site and in such a manner as to be shifted from the plate-side attaching site in plan view. The power-supplying member includes a redirecting portion where the power-supplying member extending from the power-source-side attaching site is forcibly redirected toward the plate-side attaching site.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20250069865A1

    公开(公告)日:2025-02-27

    申请号:US18584006

    申请日:2024-02-22

    Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate including a horizontal and circular wafer placement surface, and a horizontal and annular focus ring placement surface provided on an outer circumference of the wafer placement surface at a position lower than the wafer placement surface by one step, and a connection part that connects the wafer placement surface and the focus ring placement surface; and a cooling plate provided on a lower surface of the ceramic plate, wherein the connection part has a lateral surface of a circular truncated cone with a diameter that increases from the wafer placement surface to the focus ring placement surface, and the diameter of the upper surface of the circular truncated cone matches the outer diameter of the wafer placement surface, and the diameter of the lower surface of the circular truncated cone matches the inner diameter of the focus ring placement surface.

    WAFER PLACEMENT TABLE
    26.
    发明公开

    公开(公告)号:US20240136219A1

    公开(公告)日:2024-04-25

    申请号:US18299130

    申请日:2023-04-11

    Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

    WAFER PLACEMENT TABLE
    27.
    发明公开

    公开(公告)号:US20240105428A1

    公开(公告)日:2024-03-28

    申请号:US18179490

    申请日:2023-03-07

    CPC classification number: H01J37/32724 H01J37/32807

    Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.

    MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

    公开(公告)号:US20230207370A1

    公开(公告)日:2023-06-29

    申请号:US18055476

    申请日:2022-11-15

    CPC classification number: H01L21/6833

    Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate; a metal joining layer and a cooling plate (conductive substrate) provided at a lower surface of the ceramic plate; a first hole penetrating the ceramic plate in an up-down direction; and a through-hole and a gas hole (second hole) penetrating the conductive substrate in an up-down direction, and communicating with the first hole. A dense insulating case has a bottomed hole 64 opened in a lower surface, and is disposed in the first hole and the second hole. A plurality of microholes penetrates a bottom of the bottomed hole in an up-down direction. A porous plug is disposed in the bottomed hole and in contact with the bottom.

    WAFER PLACEMENT TABLE
    29.
    发明公开

    公开(公告)号:US20230154781A1

    公开(公告)日:2023-05-18

    申请号:US17816006

    申请日:2022-07-29

    Abstract: A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.

    WAFER PLACEMENT TABLE
    30.
    发明申请

    公开(公告)号:US20230123870A1

    公开(公告)日:2023-04-20

    申请号:US17938388

    申请日:2022-10-06

    Abstract: A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

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