公开(公告)号：US20250125125A1

公开(公告)日：2025-04-17

申请号：US18652975

申请日：2024-05-02

Applicant: NGK INSULATORS, LTD.

Inventor： Taro USAMI ,  Tatsuya KUNO

IPC: H01J37/32

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on an upper surface and a built-in electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include built-in refrigerant flow paths; a through-hole that penetrates the base plate in an up-down direction; an insulating tube inserted into the through-hole; and a resin-containing adhesive layer provided at least one of between an upper surface of the insulating tube and a lower surface of the ceramic plate or between an outer circumferential surface of the insulating tube and an inner circumferential surface of the through-hole, and configured to fix the insulating tube. A thermal conductivity of the insulating tube is less than or equal to 10 W/mK.

公开(公告)号：US20240297062A1

公开(公告)日：2024-09-05

申请号：US18582759

申请日：2024-02-21

Applicant: NGK INSULATORS, LTD.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Masaki ISHIKAWA ,  Taro USAMI ,  Ren NAKAMURA ,  Natsuki HIRATA ,  Kenji YONEMOTO

IPC: H01L21/683

CPC classification number: H01L21/6833

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.

公开(公告)号：US20240234199A9

公开(公告)日：2024-07-11

申请号：US18299130

申请日：2023-04-12

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01L21/687 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/68757 ,  H01J2237/002

Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

公开(公告)号：US20240153809A1

公开(公告)日：2024-05-09

申请号：US18302981

申请日：2023-04-19

Applicant: NGK INSULATORS, LTD.

Inventor： Masaki ISHIKAWA ,  Tatsuya KUNO ,  Taro USAMI

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67103

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic plate; a composite plate joined to a lower surface of the ceramic plate; a cooling plate formed of a metal material, disposed on a lower surface of the composite plate; a first fastener that fastens the composite plate and the cooling plate; a support plate that is formed of an insulating material and supports a lower surface of the cooling plate; and a second fastener that fastens the cooling plate and the support plate, wherein, when the ceramic plate is heated from room temperature to high temperature, a first layered body including the ceramic plate and the composite plate deforms such that a central portion of the first layered body is convex, and a second layered body including the cooling plate and the support plate deforms such that a central portion of the second layered body is convex.

公开(公告)号：US20240128063A1

公开(公告)日：2024-04-18

申请号：US18302027

申请日：2023-04-18

Applicant: NGK INSULATORS, LTD.

Inventor： Masaki ISHIKAWA ,  Tatsuya KUNO ,  Tomoya INA

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/32642

Abstract: A wafer placement table includes a ceramic plate that has at least a wafer placement part at an upper surface thereof, a cooling plate that is joined to a lower surface of the ceramic plate and that has a refrigerant flow path, gas common paths that are provided above the refrigerant flow path, gas introduction paths that extend from a lower surface of the cooling plate to a corresponding one of the gas common paths, and a plurality of gas distribution paths, that are provided for the gas common paths. The gas distribution path that is disposed at an outermost periphery of the ceramic plate is provided at a position that does not overlap the refrigerant flow path in plan view.

公开(公告)号：US20230420282A1

公开(公告)日：2023-12-28

申请号：US18345094

申请日：2023-06-30

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Masaki ISHIKAWA

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J37/32724

Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface on an upper surface, a first cooling substrate formed of a composite material of metal and ceramic or a low thermal expansion metal material, a metal joining layer that joins ceramic substrate and the first cooling substrate to each other, a second cooling substrate in which a refrigerant flow path is formed, a heat dissipation sheet disposed between the first cooling substrate and the second cooling substrate, a screw hole that opens in the lower surface of the first cooling substrate, a through hole that is provided at a position facing the screw hole and that extends through the second cooling substrate in an up-down direction, and a screw member that is inserted into the through hole from a lower surface of the second cooling substrate and that is screwed into the screw hole.

公开(公告)号：US20230343566A1

公开(公告)日：2023-10-26

申请号：US18173889

申请日：2023-02-24

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/002

Abstract: A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

公开(公告)号：US20230317433A1

公开(公告)日：2023-10-05

申请号：US18166585

申请日：2023-02-09

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/002

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

公开(公告)号：US20230317432A1

公开(公告)日：2023-10-05

申请号：US18157207

申请日：2023-01-20

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  B32B18/00 ,  B32B7/12 ,  B32B3/26

CPC classification number: H01J37/32724 ,  B32B18/00 ,  B32B7/12 ,  B32B3/266 ,  H01J2237/002

Abstract: In a wafer placement table, a cooling plate having a refrigerant flow channel is provided on a bottom surface side of a ceramic plate incorporating an electrode. A gas intermediate passage that is a horizontal space is provided parallel to a wafer placement surface at a location closer to the wafer placement surface than the refrigerant flow channel in the wafer placement table and has an overlapping part that overlaps the refrigerant flow channel along the refrigerant flow channel in plan view.

公开(公告)号：US20230197502A1

公开(公告)日：2023-06-22

申请号：US18065018

申请日：2022-12-13

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Kanta MIYAMOTO

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68785 ,  H01L21/68757 ,  H01L21/6833

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.