公开(公告)号：US20230112152A1

公开(公告)日：2023-04-13

申请号：US18064185

申请日：2022-12-09

Applicant: Navitas Semiconductor Limited

Inventor： Santosh Sharma ,  Daniel M. Kinzer ,  Ren Huei Tzeng

IPC: H03K17/082 ,  G05F3/26 ,  H01L29/20 ,  H03K17/687

Abstract: An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

公开(公告)号：US11605955B2

公开(公告)日：2023-03-14

申请号：US17820834

申请日：2022-08-18

Applicant: Navitas Semiconductor Limited

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02M3/158 ,  H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H02M1/00 ,  H02M3/155

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

公开(公告)号：US20220416777A1

公开(公告)日：2022-12-29

申请号：US17850792

申请日：2022-06-27

Applicant: Navitas Semiconductor Limited

Inventor： Santosh Sharma ,  Daniel M. Kinzer ,  Ren Huei Tzeng

IPC: H03K17/082 ,  H03K17/687 ,  H01L29/20 ,  G05F3/26

Abstract: An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

公开(公告)号：US20220393482A1

公开(公告)日：2022-12-08

申请号：US17820834

申请日：2022-08-18

Applicant: Navitas Semiconductor Limited

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

公开(公告)号：US20220393480A1

公开(公告)日：2022-12-08

申请号：US17820538

申请日：2022-08-17

Applicant: Navitas Semiconductor Limited

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

公开(公告)号：US20210143647A1

公开(公告)日：2021-05-13

申请号：US17151285

申请日：2021-01-18

Applicant: NAVITAS SEMICONDUCTOR LIMITED

Inventor： Daniel M. Kinzer ,  Santosh Sharma ,  Ju Jason Zhang

IPC: H02J7/00 ,  H01L23/495 ,  H01L27/02 ,  H01L23/62 ,  H02M1/088 ,  H02M3/158 ,  H03K3/012 ,  H01L29/20 ,  H03K17/10 ,  H03K19/0185 ,  H01L25/07 ,  H02M3/157 ,  H03K3/356 ,  H01L27/088 ,  H01L23/528 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.