公开(公告)号：US20130256899A1

公开(公告)日：2013-10-03

申请号：US13991899

申请日：2011-11-04

申请人： Boyan Boyanov ,  Kanwal Jit Singh

发明人： Boyan Boyanov ,  Kanwal Jit Singh

IPC分类号： H01L21/768 ,  H01L23/485

CPC分类号： H01L23/53238 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.