公开(公告)号：US20210367070A1

公开(公告)日：2021-11-25

申请号：US17040631

申请日：2018-03-26

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

公开(公告)号：US20210305524A1

公开(公告)日：2021-09-30

申请号：US16325041

申请日：2016-08-31

Applicant: Nissan Motor Co., Ltd.

Inventor： Yuji SAITO ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Yusuke ZUSHI ,  Yosuke TOMITA ,  Keisuke TAKEMOTO

IPC: H01L51/42 ,  H01L31/04 ,  H01L31/0304

Abstract: A photovoltaic device includes an organic semiconductor and an inorganic semiconductor. The organic semiconductor includes a photoactive region that generates excitons. The inorganic semiconductor has piezoelectricity and includes a dissociation region for dissociating carriers included in the excitons. A relationship of energy levels between the photoactive region and the dissociation region satisfies at least one equation ELUMO>EC or equation EHOMO

公开(公告)号：US20210167166A1

公开(公告)日：2021-06-03

申请号：US17048174

申请日：2018-04-19

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/45

Abstract: A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.

公开(公告)号：US20210159335A1

公开(公告)日：2021-05-27

申请号：US17047438

申请日：2018-04-19

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Wei NI ,  Toshiharu MARUI ,  Ryota TANAKA ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Keiichiro NUMAKURA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.