公开(公告)号：US20230253512A1

公开(公告)日：2023-08-10

申请号：US18301793

申请日：2023-04-17

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA

IPC: H01L29/94 ,  H01L29/66

CPC classification number: H01L29/945 ,  H01L29/66181 ,  H01L28/91 ,  H01L25/074

Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

公开(公告)号：US20210183726A1

公开(公告)日：2021-06-17

申请号：US16758596

申请日：2017-10-27

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Yosuke TOMITA ,  Tetsuya HAYASHI ,  Shigeharu YAMAGAMI ,  Keiichiro NUMAKURA ,  Yasuaki HAYAMI ,  Yuichi IWASAKI

IPC: H01L23/367 ,  H01L23/373

Abstract: There are included: a metal member having a groove formed on a front side surface thereof; a thermally conductive member provided in an inside of the groove and having a thermal conductivity in an X-axial direction on the front side surface higher than a thermal conductivity in a Y-axial direction orthogonal to the X-axial direction on the front side surface; and a semiconductor element provided on the front side surface of the metal member, and at least a part of which is in contact with the thermally conductive member.

公开(公告)号：US20190288058A1

公开(公告)日：2019-09-19

申请号：US16318734

申请日：2016-08-05

Applicant: Nissan Motor Co., Ltd.

Inventor： Yasuaki HAYAMI ,  Tetsuya HAYASHI ,  Yusuke ZUSHI ,  Wei NI ,  Akinori OKUBO

IPC: H01L49/02

Abstract: A semiconductor capacitor includes a semiconductor substrate, an electrode group formed on the semiconductor substrate, and a plurality of insulators sandwiched between the electrode groups to form a plurality of capacitors. At least one of the plurality of capacitors is set to be different from at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors.

公开(公告)号：US20180006571A1

公开(公告)日：2018-01-04

申请号：US15538801

申请日：2014-12-26

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Kentaro SHIN ,  Kraisorn THRONGNUMCHAI ,  Tetsuya HAYASHI ,  Akinori OKUBO

IPC: H02M7/00 ,  H02M7/48

Abstract: A power converter including an inverter for converting electric power output from a power supply, a first power feeding bus connected to the inverter and to the positive side of the power supply, a second power feeding bus connected to the inverter and the negative side of the power supply, and a plurality of connection circuits including a resistant member and a capacitive member which are connected in series, connected between the first power feeding bus and the second power feeding bus, and having at least two or more different impedances.

公开(公告)号：US20220085157A1

公开(公告)日：2022-03-17

申请号：US17423966

申请日：2019-01-21

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20200381522A1

公开(公告)日：2020-12-03

申请号：US16323373

申请日：2016-08-10

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Ryota TANAKA ,  Tetsuya HAYASHI ,  Wei NI ,  Yasuaki HAYAMI

IPC: H01L29/417 ,  H01L29/423

Abstract: A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.

公开(公告)号：US20190341486A1

公开(公告)日：2019-11-07

申请号：US16305170

申请日：2016-05-30

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wie NI ,  Tetsuya HAYASHI ,  Yasuaki HAYAMI ,  Ryota TANAKA

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08

Abstract: A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.

公开(公告)号：US20160181371A1

公开(公告)日：2016-06-23

申请号：US14905648

申请日：2014-06-03

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Toshiharu MARUI ,  Yuji SAITO ,  Kenta EMORI

IPC: H01L29/10 ,  H01L29/66 ,  H01L21/04 ,  H01L29/08 ,  H01L21/306 ,  H01L21/265 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/1095 ,  H01L21/047 ,  H01L21/0475 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

Abstract: The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region and an n-type source region each formed in the drift region to extend from a second main surface of the drift region opposite to the first main surface of the drift region in contact with the substrate in a direction perpendicular to the second main surface; a gate groove extending from the second main surface in the perpendicular direction and penetrating the source region and the well region in a direction parallel to the first main surface of the substrate; and a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween, wherein the drift region has a higher impurity concentration than the substrate, and the well region extends to the inside of the substrate.

Abstract translation: 半导体器件包括：衬底，形成在衬底的主表面上的n型漂移区; p型阱区，n型漏区和n型源极区，分别形成在漂移区中，从与漂移区的第一主表面相反的第二主表面延伸，与漂移区的第一主表面相接触 所述基板在垂直于所述第二主表面的方向上; 栅极沟槽，其从垂直方向从第二主表面延伸并沿平行于衬底的第一主表面的方向穿透源极区域和阱区域; 以及在所述栅极沟槽的表面上形成有栅极绝缘膜的栅电极，其中所述漂移区域具有比所述衬底更高的杂质浓度，并且所述阱区域延伸到所述衬底的内部。

公开(公告)号：US20210313466A1

公开(公告)日：2021-10-07

申请号：US17262001

申请日：2018-07-27

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08

Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

公开(公告)号：US20210296308A1

公开(公告)日：2021-09-23

申请号：US17263617

申请日：2018-08-01

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT S.A.S.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA

IPC: H01L27/06 ,  H01L49/02 ,  H01L21/8234

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.