SEMICONDUCTOR DEVICE, POWER MODULE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE

    公开(公告)号:US20230253512A1

    公开(公告)日:2023-08-10

    申请号:US18301793

    申请日:2023-04-17

    CPC classification number: H01L29/945 H01L29/66181 H01L28/91 H01L25/074

    Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20210183726A1

    公开(公告)日:2021-06-17

    申请号:US16758596

    申请日:2017-10-27

    Abstract: There are included: a metal member having a groove formed on a front side surface thereof; a thermally conductive member provided in an inside of the groove and having a thermal conductivity in an X-axial direction on the front side surface higher than a thermal conductivity in a Y-axial direction orthogonal to the X-axial direction on the front side surface; and a semiconductor element provided on the front side surface of the metal member, and at least a part of which is in contact with the thermally conductive member.

    SEMICONDUCTOR CAPACITOR
    3.
    发明申请

    公开(公告)号:US20190288058A1

    公开(公告)日:2019-09-19

    申请号:US16318734

    申请日:2016-08-05

    Abstract: A semiconductor capacitor includes a semiconductor substrate, an electrode group formed on the semiconductor substrate, and a plurality of insulators sandwiched between the electrode groups to form a plurality of capacitors. At least one of the plurality of capacitors is set to be different from at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors.

    POWER CONVERTER
    4.
    发明申请
    POWER CONVERTER 审中-公开

    公开(公告)号:US20180006571A1

    公开(公告)日:2018-01-04

    申请号:US15538801

    申请日:2014-12-26

    Abstract: A power converter including an inverter for converting electric power output from a power supply, a first power feeding bus connected to the inverter and to the positive side of the power supply, a second power feeding bus connected to the inverter and the negative side of the power supply, and a plurality of connection circuits including a resistant member and a capacitive member which are connected in series, connected between the first power feeding bus and the second power feeding bus, and having at least two or more different impedances.

    SEMICONDUCTOR DEVICE
    6.
    发明申请

    公开(公告)号:US20200381522A1

    公开(公告)日:2020-12-03

    申请号:US16323373

    申请日:2016-08-10

    Abstract: A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.

    SEMICONDUCTOR DEVICE
    7.
    发明申请

    公开(公告)号:US20190341486A1

    公开(公告)日:2019-11-07

    申请号:US16305170

    申请日:2016-05-30

    Abstract: A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210313466A1

    公开(公告)日:2021-10-07

    申请号:US17262001

    申请日:2018-07-27

    Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

    SEMICONDUCTOR DEVICE, POWER MODULE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

    公开(公告)号:US20210296308A1

    公开(公告)日:2021-09-23

    申请号:US17263617

    申请日:2018-08-01

    Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

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