公开(公告)号：US20180101016A1

公开(公告)日：2018-04-12

申请号：US15693531

申请日：2017-09-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Markus Arzberger ,  Andreas Ploessl ,  Roland Schulz ,  Georg Rossbach ,  Bernd Boehm ,  Frank Singer ,  Matthias Sabathil

IPC: G02B27/09 ,  G02B5/18 ,  G02B3/00

CPC classification number: G02B27/0916 ,  G02B3/0025 ,  G02B3/0068 ,  G02B3/0075 ,  G02B5/1814 ,  G02B5/1823 ,  G02B5/1857 ,  G02B5/1866 ,  G02B27/0944 ,  G02B27/0961 ,  G02B27/4272

Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

公开(公告)号：US20140113390A1

公开(公告)日：2014-04-24

申请号：US13974991

申请日：2013-08-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Ploessl ,  Heribert Zull

IPC: H01L21/78 ,  H01L21/66

CPC classification number: H01L21/78 ,  H01L22/12 ,  H01L31/06875 ,  H01L31/18 ,  H01L33/0095 ,  H01L33/20 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A method for producing singulated semiconductor components includes providing a starting substrate. An etching process is carried out to form depressions at a side of the starting substrate. The depressions are arranged in the region of the semiconductor components to be produced. Walls present between the depressions are arranged in the region of separating regions provided for severing the starting substrate. The method furthermore comprises forming a metallic layer on the side of the starting substrate with the depressions and walls and carrying out a further etching process for severing the starting substrate in the separating regions and forming the singulated semiconductor components.

Abstract translation: 一种制备单片半导体元件的方法包括提供起始衬底。 进行蚀刻处理以在起始衬底的一侧形成凹陷。 凹陷被布置在要制造的半导体部件的区域中。 存在于凹部之间的壁布置在用于切断起始衬底的分离区域中。 该方法还包括在起始衬底的侧面上形成具有凹陷和壁的金属层，并进行进一步的蚀刻工艺，以分离分离区域中的起始衬底并形成单个化的半导体组件。