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公开(公告)号：US20230006118A1
公开(公告)日：2023-01-05
申请号：US17782545
申请日：2020-11-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Hermann Nuss , Andreas Dobner , Bjoern Hoxhold , Andreas Waldschik , Erwin Beer , Bernd Boehm , Ludwig Hofbauer , Stefan Merl , Stefan Rass , Matthias Stark
IPC: H01L33/62 , H01L25/075 , H01L33/00
Abstract: In an embodiment an optoelectronic device includes a carrier and a plurality of semiconductor chips fastened on the carrier by a connector, wherein each semiconductor chip has at least one contact pad on a main surface facing away from the carrier, wherein each contact pad is contacted electrically by an interconnecting track, and wherein the interconnecting track is guided over an edge of the main surface of the semiconductor chip onto the carrier.
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公开(公告)号：US10996482B2
公开(公告)日：2021-05-04
申请号：US15693531
申请日：2017-09-01
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Hubert Halbritter , Markus Arzberger , Andreas Ploessl , Roland Schulz , Georg Rossbach , Bernd Boehm , Frank Singer , Matthias Sabathil
Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.
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Patent Agency Ranking
公开(公告)号：US09893232B2
公开(公告)日：2018-02-13
申请号：US15514489
申请日：2015-09-24
Applicant: OSRAM Opto Semiconductors GmbH , OSRAM GmbH
Inventor： Bernd Boehm , Daniel Zaspel , Stefan Hartauer , Bjoern Hoxhold
IPC: H01L33/00
CPC classification number: H01L33/0095 , H01L33/486 , H01L33/642 , H01L2933/005
Abstract: The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (10), comprising the following steps: A) arranging at least one semiconductor chip (2) on a carrier (1), B) applying an electrically insulating photoresist (3) to a top side (1a) of the carrier (1) and to the semiconductor chip (2), C) curing the photoresist (3) with a baking step, D) patterning the photoresist (3) by exposure, F) developing the photoresist (3), wherein the photoresist (3) is removed at least from a radiation penetration surface (2b) of the semiconductor chip (2), G) again curing the photoresist (3) with a baking step, and H) applying an electrically conductive contact layer (4) to the photoresist (3), wherein the electrically conductive contact layer (4) is in places at a distance (A) from a marginal surface (3a) of the photoresist (3) which faces towards the semiconductor chip (2), wherein the marginal surface (3a) facing towards the semiconductor chip (2) is exposed in places.
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公开(公告)号：US09865776B2
公开(公告)日：2018-01-09
申请号：US15413281
申请日：2017-01-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Lorenzo Zini , Bernd Boehm
CPC classification number: H01L33/24 , H01L25/167 , H01L33/0095 , H01L33/20 , H01L2924/0002 , H01L2924/00
Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.
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公开(公告)号：US20150287880A1
公开(公告)日：2015-10-08
申请号：US14430872
申请日：2013-09-26
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Lorenzo Zini , Bernd Boehm
CPC classification number: H01L33/24 , H01L25/167 , H01L33/0095 , H01L33/20 , H01L2924/0002 , H01L2924/00
Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.
Abstract translation: 本发明涉及一种用于分离半导体层的区域并将输出耦合结构引入半导体层的上侧的方法，该耦合结构用于将光耦合到半导体层之外。 半导体层的上侧被掩模覆盖，该掩模具有用于引入外耦合结构的第一开口和至少一个第二开口，该第二开口用于将分离沟槽引入半导体层。 借助于蚀刻方法，在第一开口的区域中将外耦合结构引入半导体层的上侧，并且通过该半导体层的分离沟槽同时经由第二开口引入半导体层，并且 半导体层的区域被分离。
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6.发明申请公开(公告)号：US20180101016A1
公开(公告)日：2018-04-12
申请号：US15693531
申请日：2017-09-01
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Roland Enzmann , Hubert Halbritter , Markus Arzberger , Andreas Ploessl , Roland Schulz , Georg Rossbach , Bernd Boehm , Frank Singer , Matthias Sabathil
CPC classification number: G02B27/0916 , G02B3/0025 , G02B3/0068 , G02B3/0075 , G02B5/1814 , G02B5/1823 , G02B5/1857 , G02B5/1866 , G02B27/0944 , G02B27/0961 , G02B27/4272
Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.
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公开(公告)号：US09589943B2
公开(公告)日：2017-03-07
申请号：US14430872
申请日：2013-09-26
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Lorenzo Zini , Bernd Boehm
IPC: H01L21/00 , H01L31/101 , H01L25/16 , H01L33/00 , H01L33/20
CPC classification number: H01L33/24 , H01L25/167 , H01L33/0095 , H01L33/20 , H01L2924/0002 , H01L2924/00
Abstract: The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.
Abstract translation: 本发明涉及一种用于分离半导体层的区域并将输出耦合结构引入半导体层的上侧的方法，该耦合结构用于将光耦合到半导体层之外。 半导体层的上侧被掩模覆盖，该掩模具有用于引入外耦合结构的第一开口和至少一个第二开口，该第二开口用于将分离沟槽引入半导体层。 借助于蚀刻方法，在第一开口的区域中将外耦合结构引入半导体层的上侧，并且通过该半导体层的分离沟槽同时经由第二开口引入半导体层，并且 半导体层的区域被分离。
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