Laminator
    22.
    发明申请
    Laminator 审中-公开
    层压机

    公开(公告)号:US20090294068A1

    公开(公告)日:2009-12-03

    申请号:US12453798

    申请日:2009-05-22

    IPC分类号: B32B37/10 B32B37/00 B32B37/06

    摘要: A laminator provided with a means (2) for feeding a planar object to be laminated (7), a rotary lamination film supplier (3) wound up with a lamination film (8) to be adhered on the surfaces of the planar object to be laminated (7) and a mean (4) for heating and pressing the lamination film (8) on the planar object to be laminated (7), wherein:an ID tag (61) is applied on a shaft-end of the rotary lamination film supplier (3), the ID tag (61) is registered a piece of information (S1) which is inherent to the lamination film (8) wound on said lamination film supplier (3), a wireless signal communication means (62) is arranged to face the ID tag (61) for allowing wireless signal communication with the ID tag (61), the wireless signal communication means (62) is connected with a regulation means (63).

    摘要翻译: 一种具有用于供给要层压的平面物体(7)的装置(2)的层压机,用层压薄膜(8)卷起以粘贴在平面物体的表面上的旋转层压膜供应器(3) 层压体(7)和平均体积(4),用于对叠层体(7)上的叠层薄膜(8)进行加热和加压,其中:将ID标签(61)施加在旋转叠片的轴端 薄片供应商(3),ID标签(61)登记了卷绕在所述层压膜供应器(3)上的层压薄膜(8)固有的信息(S1),无线信号通信装置(62)是 被布置为面向用于允许与ID标签(61)的无线信号通信的ID标签(61),无线信号通信装置(62)与调节装置(63)连接。

    Nonvolatile semiconductor storage device and its manufacturing method
    23.
    发明授权
    Nonvolatile semiconductor storage device and its manufacturing method 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US07485527B2

    公开(公告)日:2009-02-03

    申请号:US11456024

    申请日:2006-07-06

    摘要: There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

    摘要翻译: 提供了一种在存储单元之间较少受到电特性差异的非易失性半导体存储装置。 设置在基板上的浮置栅极由载流子俘获效率不同的两种或更多种材料制成,以便累积载流子,从而将数据存储在浮置栅电极中。 因此,产生没有如此大的阈值电压变化的区域,并且将具有小变化的部分用作电路操作的余量,从而消除单元之间的差异并实现高速操作。

    Nonvolatile Semiconductor Storage Device and Its Manufacturing Method
    24.
    发明申请
    Nonvolatile Semiconductor Storage Device and Its Manufacturing Method 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US20060252205A1

    公开(公告)日:2006-11-09

    申请号:US11456024

    申请日:2006-07-06

    IPC分类号: H01L21/336

    摘要: There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.

    摘要翻译: 提供了一种在存储单元之间较少受到电特性差异的非易失性半导体存储装置。 设置在基板上的浮置栅极由载流子俘获效率不同的两种或更多种材料制成,以便累积载流子,从而将数据存储在浮置栅电极中。 因此,产生没有如此大的阈值电压变化的区域,并且将具有小变化的部分用作电路操作的余量,从而消除单元之间的差异并实现高速操作。

    Methods for fabricating memory devices
    25.
    发明授权
    Methods for fabricating memory devices 失效
    制造存储器件的方法

    公开(公告)号:US06410412B1

    公开(公告)日:2002-06-25

    申请号:US09663006

    申请日:2000-09-15

    IPC分类号: H01L214763

    摘要: Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.

    摘要翻译: 用于制造具有多点浮置栅极的存储器件的方法,其确保半导体膜的期望结晶,而不破坏多晶硅层的表面的平坦度和隧道氧化物膜,从而允许产生期望的半导体点,并且允许 存储器件具有多点浮置栅极,即使当衬底由玻璃或塑料制成时,其容易且成本低廉。 这种用于制造存储器件的方法包括以下步骤:在衬底上形成半导体膜并通过第一激光退火处理所述半导体膜以具有多晶结构; 在半导体膜上形成具有半导体元件含量过多的非化学计量组成的半导体点形成膜; 并通过第二激光退火将半导体点分散在半导体点形成膜内,从而产生半导体点; 其中用于第一激光退火的激光器的脉冲能量密度大于用于第二激光退火的激光器的脉冲能量密度。